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| Composite Transistors XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD1938 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 50 20 25 300 500 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 5S Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON Resistance *1 *2 (Ta=25C) Symbol VCEO ICBO IEBO hFE hFE (small/large)*1 VCE(sat) VBE fT Cob Ron*2 1k IB=1mA f=1kHz V=0.3V Conditions IC = 1mA, IB = 0 VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = -4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 20 typ max +0.1 1.450.1 s Features Unit V A A 0.1 0.1 500 0.5 0.99 0.1 0.6 80 7 1.0 2500 V V MHz pF Ratio between 2 elements Ron test circuit VB VV VA VB Ron= !1000() VA-VB 1 Composite Transistors PT -- Ta 500 XN1504 IC -- VCE 24 Ta=25C 120 VCE=2V 100 25C Ta=75C 80 -25C IC -- VBE Total power dissipation PT (mW) Collector current IC (mA) IB=10A 16 9A 8A 7A 6A 5A 8 4A 3A 2A 1A 300 Collector current IC (mA) 400 20 12 60 200 40 100 4 20 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=10 2400 VCE=2V 120 fT -- I E VCB=6V f=200MHz Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 2000 Transition frequency fT (MHz) 30 100 300 1000 100 1 1600 Ta=75C 25C 1200 -25C 800 80 0.1 25C 0.01 60 Ta=75C 40 -25C 400 20 0.001 0.1 0 1 10 100 1 3 10 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 12 Collector output capacitance Cob (pF) 10 f=1MHz IE=0 Ta=25C 8 6 4 2 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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