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| MRSM75 Rotation detection MR sensor FEATURES Rotation Detection sensor -Various usages for rotation detection Operating with independent pole Superior Temperature stability Wide operating source voltage No contact detection sensor -dependable for various use FUNDEMENTAL OPERATION Direction of Magnetic Field Circuit Block A Direction B Direction PERFORMANCE Performance Characteristics (Ta = 253C unless otherwise specified) Operating require Condition H = 0 .0mT(Magnetic Flux Density) {0 A/m (Magnetic Field Strength)} When magnetic field is applied H 3.0(Typ)mT(Magnetic Flux Density) To A direction {2.4kA/m (Magnetic Field Strength)} When magnetic field is applied H 3.0 mT(Magnetic Flux Density) To B direction {2.4kA/m (Magnetic Field Strength)} When power switch is ON Output Voltage Unfixed Hi-level Lo-level Operating Conditions Recommended (Ta = 253C unless otherwise specified) Item Source Voltage Load Resistance Ambient Temperature Applied magnetic Field *1) Symbol Vcc RL Ta H ( ) = [kA/m](SI) Condition Vcc=12V - Min 3 10.0 -20 3.0 (2.4) Std 12 25 - Max 30 80 - Unit V k C mT(*1 (kA/m) (*2 1 [mT](SI) = 10 [G] (CGS) *2) Electrical Characteristics (Ta = 253 Item Circuit Current Output Voltage 1 unless otherwise specified) Symbol Icc VoH Condition Vcc=12V Output open RL=10 Vcc=12V Min Std Max 5 Unit mA 10 Output Voltage 2 Response Frequency VoL f(max) RL=10 Vcc=12V Vcc=12V 1 2 kHz |
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