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Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors (built-in resistors) DTA114TE/ DTA114TUA /DTA114TCA/ DTA114TKA/ DTA114TSA TRANSISTOR (PNP) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting extemal input resistors. * The bias resistors conisit of thin-film resistors with complete isolation to without connecting extemal input. They also have the advantage of almost completely Eliminating parasitic effects. * Only the on/off conditions need to be set for operation, marking device design easy. PIN CONNENCTIONS AND MARKING DTA114TE DTA114TUA (1) Base (2) Emitter (3) Collector Addreviated symbol: 94 SOT-323 Addreviated symbol: 94 (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector SOT-523 DTA114TKA (1) Base (2) Emitter (3) Collector DTA114TCA DTA114ECA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector SOT-23-3L Addreviated symbol: 94 SOT-23 Addreviated symbol: 94 DTA114TSA (1) Emitter (2) Collector (3) Base TO-92S MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter E VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 150 LIMITS(DTA114T) UA KA -50 -50 -5 -100 200 -55~+150 300 CA SA V V V mA mW Units ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Imput resistor breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT R1 unless Test otherwise specified) MIN -50 -50 -5 -0.5 -0.5 100 250 600 -0.3 250 7 10 13 V MHz k TYP MAX UNIT V V V uA uA conditions Ic=-50A,IE=0 Ic=-1mA,IB=0 IE=-50A,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-5V,IC=-1mA IC=-10mA,IB=-1mA VCE=-10V,IC=-5mA, f=100MHz Typical Characteristics |
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