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AOT430 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5m (VGS = 10V)
UIS TESTED!
TO-220 D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
Maximum 75 25 80 78 200 45 300 268 134 -55 to 175
Units V V A A mJ W C
TC=25C TC=100C
G
ID IDM IAR EAR PD TJ, TSTG
Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Steady-State Steady-State
Symbol RJA RJC
Typ 45 0.45
Max 60 0.56
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOT430
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 2 200 9.8 16.0 90 0.7 1 80 4700 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 400 180 3 114 VGS=10V, VDS=30V, ID=30A 33 18 21 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 39 70 24 53 143 11.5 19.0 2.7 Min 75 1 5 1 4 Typ Max Units V A uA V A m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VDS=5V, ID=80A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250 10V 200 8V 6V 150 ID (A) ID(A) 60 125C 40 25C 50 VGS=4.5V 0 0 2 4 6 8 10 VDS (Volts) Figure 1: On-Region Characteristics 13 12 11 RDS(ON) (m) 10 VGS=10V 9 8 7 6 0 20 40 60 80 100 0.6 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 ID=30A 25 20 RDS(ON) (m) 15 10 25C 5 1.0E-04 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance 0 3 3.5 4 4.5 5 5.5 6 20 -40C 5.5V 80 VDS=5V 100
100
VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 1.6 1.4 1.2 1 0.8 VGS=10V, 30A
1.0E+02 1.0E+01 125C 1.0E+00 125C IS (A) 1.0E-01 1.0E-02 1.0E-03 -40C 25C
Alpha & Omega Semiconductor, Ltd.
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 40 80 120 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TC=25C ID(A), Peak Avalanche Current 100 ID (Amps) 10s 1ms 10 RDS(ON) limited 1 DC 10ms 150 125 100 75 50 25 0 0.000001 TA=25C TA=150C VDS=30V ID=30A Capacitance (nF) 8
6
Ciss
4
2 Crss 0 0 30 45 VDS (Volts) Figure 8: Capacitance Characteristics 15 60 Coss
0.1 0.1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1000
0.00001
0.0001
0.001
Time in avalanche, tA (s) Figure 10: Single Pulse Avalanche capability
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.45C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Current De-rating (Note B) Power Dissipation (W) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.

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