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AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected. Standard Product AO7800 is Pbfree (meets ROHS & Sony 259 specifications). AO7800L is a Green Product ordering option. AO7800 and AO7800L are electrically identical.
Features
VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300m (VGS = 4.5V) RDS(ON) < 350m (VGS = 2.5V) RDS(ON) < 450m (VGS = 1.8V)
SC-70-6 (SOT-323) Top View S1 G1 D2 D1 G2 S2 G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 8 0.9 0.7 5 0.3 0.19 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 360 400 300
Max 415 460 350
Units C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
AO7800
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=4.5V, I D=0.9A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, I D=0.75A VGS=1.8V, I D=0.7A gFS VSD IS Forward Transconductance VDS=5V, ID=0.8A Diode Forward Voltage IS=0.5A,VGS=0V Maximum Body-Diode Continuous Current 0.5 5 181 253 237 317 2.6 0.69 1 0.4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.57 VGS=4.5V, V DS=10V, I D=0.8A 0.13 0.36 3.2 VGS=5V, VDS=10V, RL=12.5, RGEN=6 IF=0.8A, dI/dt=100A/s IF=0.8A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 8.1 4 1.9 120 300 350 350 450 0.75 Min 20 1 5 25 0.9 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : July 2003
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 4V ID (A) ID(A) 6 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 480 440 400 RDS(ON) (m) 360 320 280 240 200 160 0 1 2 3 4 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=2.5V Normalized On-Resistance VGS=1.8V 1.8 VGS=1.8V 1.6 1.4 1.2 1 VGS=4.5V ID=0.9A VGS=2.5V ID=0.75A I 0 7A 3.5V 3V 2.5V VGS=2V 1 10V 8V 4 5V 3 VDS=5V 25C 125C 2
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V
500 460 420 RDS(ON) (m) 380 IS (A) 340 300 260 220 180 140 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=0.9A
1E+01 1E+00 125C 1E-01 1E-02 25C 1E-03 1E-04 1E-05 0.0 0.4 0.8 1.2 1.6 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=0.9A Capacitance (pF) 200
150
Ciss
100 Coss 50 Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
10.0
TJ(Max)=150C, TA=25C RDS(ON) limited 10ms 0.1s 100s 1ms Power (W) 10s
16
TJ(Max)=150C TA=25C
ID (Amps)
1.0
12
8
0.1
1s 10s DC
4
0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=415C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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