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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3112 2SK3112-S 2SK3112-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ)
FEATURES
* Gate voltage rating 30 V * Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A) * Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) * Avalanche capability rated * Built-in gate protection diode * Surface mount device available (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 30 25 75 100 1.5 150 -55 to +150 25 250
V V A A W W C C A mJ (TO-263) (TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 100 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13335EJ1V0DS00 (1st edition) Date Published May 2001 NS CP (K) Printed in Japan
(c)
1998,2001
2SK3112
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 160 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 50 A/s Test Conditions VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VGS = 10 V, ID = 13 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V , ID = 13 A VGS = 10 V RG = 10 2.5 6.0 76 1600 430 280 35 140 110 70 60 11 40 1.0 300 1.8 110 MIN. TYP. MAX. 100 10 4.5 Unit
A A
V S m pF pF pF ns ns ns ns nC nC nC V ns
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 V 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13335EJ1V0DS
2SK3112
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 70
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 1000 100
ID - Drain Current - A
60 50 40 30 20 10 0 0 5 10 15 20 VGS = 10 V Pulsed 25 30 VDS - Drain to Source Voltage - V
10 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 VDS = 10 V Pulsed 10 12 Tch = 125C 75C 25C -25C
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
|yfs| - Forward Transfer Admittance - S
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 VDS = 10 V ID = 1 mA
100 Tch = -25C 25C 75C 125C
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V Pulsed
10
4.0
1
3.0
2.0
0.1
1.0 -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - C
0.01 0.01
0.1
1 ID- Drain Current - A
10
100
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.5 Pulsed 0.4 ID = 25 A 13 A 5A 0.3
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 VGS = 10 V Pulsed
0.2
0.1
0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V
1
10
100
ID - Drain Current - A
Data Sheet D13335EJ1V0DS
3
2SK3112
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
RDS (on) - Drain to Source On-state Resistance - m
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
200
10
VGS = 10 V
150
ID = 25 A 13 A
1 0V 0.1
100
50 VGS = 10 V Pulsed 100 150
0 -50
0
50
0.01 0 0.5 1.0
Pulsed 1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss - Capacitance - pF
1000
Ciss
td(off) 100 tf td(on) 10 tr
100
Coss Crss VGS = 0 V f = 1 MHz 1 10 100 1000
10 0.1
1 0.1
1
VDD = 100 V VGS = 10 V RG = 10 10 100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DIODE CURRENT 1000
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 240 200 160 120 80 40 0 0 10 20 30 40 50 60 70 QG - Gate Charge - nC VDS ID = 25 A 0 VDD = 160 V 100 V 40 V VGS 8 6 4 2 12 10
VGS - Gate to Source Voltage - V
100
10
1 0.1
di/dt = 50 A/ s VGS = 0 V 1 10 100 IF - Diode Current - A
4
Data Sheet D13335EJ1V0DS
2SK3112
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
PT - Total Power Dissipation - W
100 80 60 40 20 0 0
120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
20
40
60
80
100 120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
o S(
d ite Lim n)
RD
ID - Drain Current - A
ID(DC)
10
1
PW ID(pulse) =1 0 10 s 0 s 1m Po 3s we 10 ms rD m s iss D ipa C tio n Lim ite d
0.1
TC = 25C Single Pulse 1 10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3C/W
rth(t) - Transient Thermal Resistance - C/W
10
1
Rth(ch-C) = 1.25C/W
0.1
0.01 10
Single Pulse 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - sec
Data Sheet D13335EJ1V0DS
5
2SK3112
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 100 V RG = 25 VGS = 20 V 0 V IAS 25 A
IAS = 25 A
EA
S=
Energy Derating Factor - %
100 80 60 40 20 0
25
10
0m
J
1 0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13335EJ1V0DS
2SK3112
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 TYP. 4.8 MAX.
2)TO-262
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
1.30.2
6.0 MAX.
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
10 TYP. 4 4.8 MAX. 1.30.2
EQUIVALENT CIRCUIT
Drain
1.00.5
8.50.2
Gate
Body Diode
1 1.40.2 0.70.2 2.54 TYP.
2
3
5.70.4
R 0.5
T
. YP
R P TY
.
Gate Protection Diode
Source
2.54 TYP.
0.8
0.50.2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D13335EJ1V0DS
7
2SK3112
* The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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