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| NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt ZTX855 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 250 150 6 10 4 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 20 35 60 210 960 2-300 MIN. 250 250 150 6 TYP. 375 375 180 8 50 1 50 1 10 40 60 100 260 1100 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=100A IC=1A, RB 1K IC=10mA* IE=100A VCB=200V VCB=200V, Tamb=100C VCB=200V VCB=200V, Tamb=100C VEB=6V IC=100mA, IB=5mA* IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=4A, IB=400mA* IC=4A, IB=400mA* A A Base-Emitter Saturation Voltage VBE(sat) ZTX855 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 35 MIN. TYP. 0.88 200 200 55 10 90 22 66 2130 MAX. 1 300 MHz pF ns ns UNIT V CONDITIONS. IC=4A, VCE=5V* IC=10mA, VCE=5V IC=1A, VCE=5V* IC=4A, VCE=5V* IC=10A, VCE=5V* IC=100mA, VCE=10V f=50MHz VCB=20V, f=1MHz IC=1A, IB!=100mA IB2=100mA, VCC=50V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-301 ZTX855 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 300 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=10V 100 200 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 2.0 VBE(sat) - (Volts) 1.5 VBE - (Volts) IC/IB=10 IC/IB=50 1.5 1.0 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-302 hFE - Typical Gain VCE(sat) - (Volts) 1.4 |
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