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| STK7575P Semiconductor Advanced Power MOSFET SWITCHING REGURATOR APPLICATIONS Features * High Voltage: BVDSS=75V(Min.) * Low Crss : Crss=220pF(Typ.) * Low gate charge : Qg=80nC(Typ.) * Low RDS(on) :RDS(on)=15m(Max.) Ordering Information Type NO. STK7575P Marking STK7575 Package Code TO-220AB-3L Outline Dimensions 3.70 Max. 9.80~10.20 unit : mm 15.35~16.05 12.80~13.00 9.05~9.35 1.37 Max. 12.68~13.48 1.62 Max. 0.90 Max. 2.54 Typ. 2.54 Typ. 0.60 Max. 2.60 Max. 3.00 Typ. 4.35~4.65 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0P007-000 1 STK7575P Absolute maximum ratings (Tc=25C) Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25) Continuous Drain current (Tc=100) Drain Current-Pulsed Power Dissipation (Tc=25) Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy Junction temperature Storage temperature range Symbol VDSS VGSS ID ID IDM PD EAS IAR EAR TJ Tstg Rating 75 20 75 57.8 300 220 1310 75 17.3 175 -55~175 Unit V V A A A W mJ A mJ C Thermal Resistance Characteristic Junction to Case Junction to Ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 0.68 62.5 Units /W KSD-T0P007-000 2 STK7575P Electrical Characteristics (Tc=25C) Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain("Miller")charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=75V, VGS=0V VDS=0V, VGS=20V VGS=10V, ID=37.5A VDS=20V, ID=37.5A VGS=0V, VDS=25V, f=1MHz Min. 75 2.0 - Typ. 12 15 2540 950 220 40 230 170 190 80 16 30 Max. 4.0 10 100 15 3210 1200 275 80 460 340 330 105 - Unit V V A nA m S pF VDD=40V, ID=75A RG=25 - ns VDS=60V, VGS=10V, ID=75A - nC Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Pulsed-source current Diode forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=75A Is=75A diF/dt=100A/us Min - Typ 90 250 Max 75 300 1.5 - Units A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=0.32mH IAS=75A, VDD=25V, RG=25 , starting TJ=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0P007-000 3 STK7575P Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig.6 VGS - QG KSD-T0P007-000 4 STK7575P Fig. 7 VDSS - TJ Fig.8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0P007-000 5 STK7575P Fig. 10 Gate Charge Test Circuit & Waveform Fig. 11 Resistive Switching Test Circuit & Waveform Fig. 12 EAS Test Circuit & Waveform KSD-T0P007-000 6 STK7575P Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0P007-000 7 STK7575P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P007-000 8 |
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