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| SS8550 Plastic-Encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) Emitter Cutoff Current(VEB = -5 Vdc, I C =0 Vdc) 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO I EBO Min -25 -40 -5.0 Max -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw SS8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) hFE(1) hFE(2) VCE(sat) VBE(sat) fT 85 40 100 - 400 -0.5 Vdc DC Current Gain (IC= -800 mAdc, VCE= -1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) Base-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) Transition Frequency (VCE =-10V, I C =-50mA, f=30 MHz) - -1.2 - Vdc MHz Classification of hFE(1) Rank Range B 85-160 C 120-200 D 160-300 E 300-400 WEITRON http://www.weitron.com.tw SS8550 -0.5 1000 VCE = -1V IB=-4.0mA IC[mA], COLLECTOR CURRENT -0.4 IB=-3.5mA IB=-3.0mA hFE, DC CURRENT GAIN 100 -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 10 -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT FIG.1 Static Characteristic FIG.2 DC Current Gain -100 -10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = -1V IC=10IB IC[mA], COLLECTOR CURRENT -10 -1000 VBE(sat) -1 -100 VCE(sat) -10 -0.1 -0.1 -0.0 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 VCE=-10V Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 -1000 10 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT FIG.5 Collector Output Capacitance FIG.6 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw SS8550 unit:mm TO-92 Outline Dimensions E TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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