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| SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I I Issue 2 - October 1997 PARTMARKING DETAIL - O2 BST82 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp 2ms) Continuous Drain Current at T amb=25C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 20 300 -55 to +150 UNIT V V mA mA V mW C ELECTRIAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain Source Breakdown Voltage Gate Source Threshold Voltage Gate Body Leakage Emitter Cut-Off Current Static Drain-Source On-state Resistance Transfer Admittance Input Capacitance (2) SYMBOL B VDSS V GS(th) I GSS I DSS R DS(on) | yfs | C iss 7 150 15 13 3 4 4 30 20 6 10 10 MIN. 80 1.5 3.5 100 1 10 TYP. MAX. UNIT V V nA A mS pF pF pF ns ns I D=175mA, V DD=50V V GS=0 to 10V V DS=10V, V GS=0V f=1MHz CONDITIONS. I C=100A I D=1mA, V DS=V GS VGS=20V V DS=60V I D=150mA, V GS=5V I D=175mA, V DS=5V Common Source C oss Output Capacitance (2) Reverse Transfer Capacitance (2) Switching Times C rss T on T off (1) Swithcing times measured at 150 source impedance and <5ns rise time on a pulse generator (2) Sample test *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
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