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Preliminary
Product Description
Sirenza Microdevices' SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
SXB-4089 SXB-4089Z
Pb
RoHS Compliant & Green Package
400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier with Active Bias
50 45 40 35
Typical IP3, P1dB, Gain
OIP3 P1dB Gain
Product Features
* On-chip Active Bias Control, Single 5V Supply * High Output 3rd Order Intercept: +45 dBm typ. * High P1dB : +28 dBm typ. * High Gain: +20 dB at 880 MHz * Low Rth: 25C/W typ. * Robust 2000V ESD, Class 2
dBm
30 25 20 15 10 5 0
Applications
880 MHz 1960 MHz 2140 MHz
* W-CDMA, PCS, Cellular Systems * Multi-Carrier Applications
Units Frequency Min. Typ. Max.
Symbol
Parameters
P1dB
Output Power at 1 dB Compression
dBm
880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz
27.5 27.5 27.5 20 15 14.5 1.3:1 1.3:1 1.3:1 43.5 44.5 44.5 4.9 3.3 3.3 4.75 235 5 260 25.3 5.25 285
S21
Small Signal Gain
dBm
13
16
S11
Input VSWR
OIP3
Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dBm
880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz
NF VCC ID RTH, j-l
Test Conditions:
Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead)
Ta = 25C ZO = 50 Ohms
dB V mA C/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp 880 MHz Application Circuit Data, VCC=5V, ID=270mA
P1dB vs. Frequency
30 28 26
25 23 21 dB 19
Gain vs. Frequency
dBm
24
25C
22 20 0.85
-40C 85C
S21_25C
17 15 0.85
S21_-40C S21_85C
0.86
0.87
0.88
0.89
0.9
0.91
0.86
Frequency (GHz)
0.87 0.88 0.89 Frequency (GHz)
0.9
0.91
0 -5 -10 -15 -20 -25 -30 0.85
Input/Output Return Loss, Isolation vs. Frequency, T=25C
OIP3 vs. Frequency (11 dBm tones)
50 47 44 41 38 35 0.85
25C -40C 85C
S11 S12 S22
0.86
0.87 0.88 0.89 Frequency (GHz)
0.9
0.91
dBm
dB
0.86
0.87
0.88
0.89
0.9
0.91
Frequency (GHz)
50 47
OIP3 vs. Tone Power @880MHz
-40 -45 -50
ACP @880MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.)
25C -40C 85C
IM3 (dBc)
dBc
25C -40C 85C
44 41 38 35 6 8 10 12 14 16 18 20
-55 -60 -65 -70 -75 15 16 17 18 19 20 21 22
Pout (dBm)
Ch. Pwr
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp 1960 MHz Application Circuit Data, VCC=5V, ID=270mA
P1dB vs. Frequency
30 28 26
20 18 16 dB 14
Gain vs. Frequency
dB
24
25C
S21_25C
22 20 1.93
-40C 85C
12 10 1.93
S21_-40C S21_85C
1.94
1.95
1.96
1.97
1.98
1.99
1.94
GHz
1.95 1.96 1.97 Frequency (GHz)
1.98
1.99
0 -5 -10 -15 -20 -25 -30 1.93
Input/Output Return Loss, Isolation vs. Frequency, T=25C
50
OIP3 vs. Frequency
47
44
dBm
S11 S12 S22
dB
41
25C -40C 85C
38
1.94
1.95 1.96 1.97 Frequency (GHz)
1.98
1.99
35 1.93
1.94
1.95
1.96
1.97
1.98
1.99
Frequency (GHz)
50 47
OIP3 vs. Tone Power @1960MHz
-40 -45 -50
ACP @1960MHz vs. Ch. Pwr.(IS-95 9Ch.Fwd.)
25C -40C 85C
IM3 (dBc)
dBc
25C -40C 85C
44 41 38 35 6 8 10 12 14 16 18 20
-55 -60 -65 -70 -75 15 16 17 18 19 20 21 22
Pout (dBm)
Ch. Pwr
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp 2140 MHz Application Circuit Data, VCC=5V, ID=270mA
30 28 26
P1dB vs. Frequency
20
S21_25C
Gain vs. Frequency
18 16 14
25C -40C
S21_-40C S21_85C
dB
24 22 20 2.11
dB
85C
12 10 2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.12
GHz
2.13 2.14 2.15 Frequency (GHz)
2.16
2.17
0 -5 -10 dB -15 -20
Input/Output Return Loss, Isolation vs. Frequency, T=25C
S11 S12 S22
OIP3 vs. Frequency (11 dBm tones)
50 47 44
dBm
41
25C
-25 -30 2.11
38 35 2.11
-40C 85C
2.12
2.13 2.14 2.15 Frequency (GHz)
2.16
2.17
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
OIP3 vs. Tone Power @2140MHz
50 47 44 41
ACP @2140MHz vs. Ch. Pwr.(WCDMA 64Ch.Fwd.)
-35 -40
25C
-45
-40C 85C
IM3 (dBc)
dBc
25C -40C 85C
-50 -55
38 35 6 8
-60 -65
10
12
14
16
18
20
15
16
17
18
19
20
21
Pout (dBm)
Ch. Pwr
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp Application Schematic for 880 MHz
=50, 3.2
=50, 5.4
=50, 3.0
=50, 2.8
=50, 20.1
Note: Electrical lengths
are determined from the center of a shunt component, a cut on the center trace and edge of lead on package.
Evaluation Board Layout for 880 MHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp Application Schematic for 1960 MHz
=50, 4.7
=50, 1.9
=50, 1.9
=50, 16.8
Note: Electrical lengths
are determined from the center of a shunt component, a cut on the center trace and edge of lead on package.
Evaluation Board Layout for 1960 MHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp Application Schematic for 2140 MHz
=50, 4.7
=50, 2.3
=50, 1.9
=50, 16.8
Note: Electrical lengths
are determined from the center of a shunt component, a cut on the center trace and edge of lead on package.
Evaluation Board Layout for 2140 MHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com
EDS-103215 Rev C
Preliminary SXB-4089 1/2 Watt InGaP/GaAs HBT Amp
Nominal Package Dimensions
Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Bottom View
Side View
Part Number Ordering Information
Part Number Reel Size Devices / Reel
Absolute Maximum Ratings
SXB-4089 SXB-4089Z
7" 7"
1000 1000
Parameter Max Device Current (ID) Max Device Voltage (VD) Max. RF Input Power Max. Dissipated Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp.
Absolute Limit 500 mA 6V 60mW 2W +165C -40C to +85C +150C
Package Marking 4 4
XB40
2 3
XB4Z
2
1
2
3
1
2
1
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Tin-Lead
1
Lead Free
Pin #
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
http://www.sirenza.com
EDS-103215 Rev C
1
ESD: Class 2 (Passes 2000V ESD Pulse)
Appropriate precautions in handling, packaging and testing devices must be observed.
2, 4
GND
MSL (Moisture Sensitivity Level) Rating: Level 1
3
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 8
RF OUT/ BIAS
3
3

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