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MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM80DY-3H
* * * * *
IC Collector current .......................... 80A VCEX Collector-emitter voltage ......... 1400V hFE DC current gain............................. 100 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 93 6.5 B2X C2E1 E2 C1
B1 E1 E2 B2
48
62
B2 E2
36
30
LABEL
23
7
B2X B1X
12 28 28 3-M5 Tab#110, t=0.5 C2E1 E2
C1
E1 B1X B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=3V VEB=3V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1400 1400 1400 7 80 80 800 8 800 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 3000 1.47~1.96 15~20 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1400V, VEB=3V VCB=1400V, Emitter open VEB=7V IC=80A, IB=1.6A -IC=80A (diode forward voltage) IC=80A, VCE=5V Min. -- -- -- -- -- -- 100 -- VCC=800V, IC=80A, IB1=-IB2=1.6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 10 10 200 3.0 3.5 1.8 -- 3.0 20 3.0 0.155 0.6 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) IB=2.0A IB=1A IB=0.5A 80 IB=0.3A IB=0.1A 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
120
DC CURRENT GAIN hFE
160
VCE=2.8V
40 Tj=25C 0 1 2 3 4 5 VCE (V)
0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
BASE CURRENT IB (A)
VBE(sat)
VCE=2.0V Tj=25C
SATURATION VOLTAGE
VCE(sat)
IB=1.6A Tj=25C Tj=125C
2 3 4 5 7 10 1
2 3 4 5 7 10 2
2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) 10 2 7 5 3 2 10 1 7 5 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
4
ts
3 IC=100A 2 IC=30A Tj=25C Tj=125C IC=50A IC=80A
SWITCHING TIME
1
0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A)
tf 10 0 7 VCC=800V 5 IB1=-IB2=1.6A 3 Tj=25C ton 2 Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 VCC=800V IC=80A IB1=1.6A ts
REVERSE BIAS SAFE OPERATING AREA
200
COLLECTOR CURRENT IC (A)
ts, tf (s)
160 IB2=-4A Tj=125C 120
SWITCHING TIME
tf Tj=25C Tj=125C
80
40
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
400
800
1200
1600
2000
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2
1m
DERATING FACTOR OF F. B. S. O. A.
100 90
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
50 s
200
s
s
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
10 0 7 5 3 2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5
DC
500
s
VCE (V)
CASE TEMPERATURE
TC (C)
Zth (j-c) (C/ W)
10 -1 7 5 3 2 10 -2 7 5 3 2 10 -3 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 Irr (A), Qrr (c) 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=800V 5 IB1=-IB2=1.6A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 Irr
Qrr 10 0 trr (s)
Feb.1999
trr 10 -1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0
0.8 Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)

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