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| TLP197G TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET TLP197G Modem Fax PBX Measurement Instrumentation The TOSHIBA mini flat photo relay TLP197G is a small outline photo relay,suitable for surface mount assembly. The TLP197G consists of an gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a six lead 2.1mm height package, which enable TLP197G to be applied in card modems. The TLP197G is a bidirectional switch which can replace mechanical relays in fax machines and modems etc. * * * * * * * * * * SOP 6pin(2.54SOP6): 1-form-A Peak off-state voltage: 350V (min) Trigger LED current: 3mA (max) On-state current:120mA(max) (A connection) On-state resistance: 35(max) Isolation voltage: 1500Vrms (min) UL recognized: UL1577, file No./E67349 BSI approved: BS EN60065: 1994,certificate No.8273 BS EN60950: 1992,certificate No.8274 SEMKO approved: SS EN60065 SS EN60950 Option(V4)type TUV approved: DIN VDE0884 / 06.92, certificate no.R9850580 JEDEC EIAJ TOSHIBA Weight: 0.13g Unit in mm Pin Configuration (top view) 1 2 3 6 5 4 1 : Anode 2 : Cathode 3 : NC 4 : Drain D1 5 : Source 6 : Drain D2 1-Form-a 6 4 Schematic 1 2 6 5 4 1 3 1 2002-09-25 TLP197G Maximum Ratings (Ta = 25C) Characteristics Forward current Forward current derating (Ta 25C) Led Pulse forward current (100s pulse,100pps) Reverse voltage Junction temperature Off-state output terminal voltage A connection On-state current Detector B connection C connection A connection On-state current derating (Ta 25C) B connection C connection Junction temperature Storage temperature range Operating temperature range Lead soldering temperature(10 s) Isolation voltage (AC,1 min.,RH 60%) (Note 1) Tj Tstg Topr Tsol BVS 125 -55~125 -40~85 260 1500 C C C C Vrms DION/C -1.2 mA/C ION 120 mA Symbol IF DIF/C IFP VR Tj VOFF Rating 50 -0.5 1 5 125 350 Unit mA mA/C A V C V (Note 1): Device considered a two-terminal device: Pins1,2 and 3 shorted together and pins 4,5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current(A connection) Operating temperature Symbol VOFF IF ION Topr Min. 3/4 5 3/4 -20 Typ. 3/4 7.5 3/4 3/4 Max. 280 25 100 65 Unit V mA mA C Circuit Connections 1 2 3 6 5 4 A Connection LOAD or 1 2 3 6 5 4 B Connection LOAD DC 1 2 3 6 5 4 C Connection LOAD DC AC DC 2 2002-09-25 TLP197G Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Led Reverse current Capacitance Detector Off-state current Symbol VF IR CT IOFF IF=10mA VR=5V V=0, f=1MHz VOFF=350V Test Condition Min. 1.0 3/4 3/4 3/4 Typ. 1.15 3/4 30 3/4 Max. 1.3 10 3/4 1 Unit V mA pF mA Capacitance COFF V=0, f=1MHz 3/4 40 3/4 pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Trigger LED current On-state resistance A connection Symbol IFT RON Test Condition ION=120mA ION=120mA, IF=5mA ION=20~120mA, IF=5mA Min. 3/4 3/4 3/4 Typ. 1 22 26 Max. 3 35 40 W Unit mA Isolation Characteristics (Ta = 25C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS=0, f=1MHz VS=500V, R.H. < 60% = AC,1minute Isolation voltage BVS AC,1second (in oil) DC,1minute (in oil) Min. 3/4 510 10 Typ. 0.8 10 14 Max. 3/4 3/4 3/4 3/4 3/4 Unit pF W Vrms Vdc 1500 3/4 3/4 3/4 3000 3000 Switching Characteristics (Ta = 25C) Characteristic Turn-on time Turn-off time Symbol tON tOFF RL=200W VCC=20V, IF=5mA Test Condition (Note 2) Min. 3/4 3/4 Typ. 0.3 0.1 Max. 1 1 Unit ms (Note2): Switching time test circuit IF 1 2 6 4 RL VCC VOUT IF 90% tOFF VOUT tON 10% 3 2002-09-25 TLP197G IF - Ta 100 140 120 ION - Ta Allowable forward current IF (mA) (mA) On-state current ION 80 100 80 60 40 20 60 40 20 0 20 0 20 40 60 80 100 120 0 20 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 5000 3000 Pulse width 100s Ta = 25C 1000 500 300 100 50 30 Ta = 25C IF -VF Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF 10 3 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 3 10 2 3 10 1 3 10 0 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF/Ta - IF 1000 2.8 500 IFP - VFP (mA) IFP Pulse forward current Forward voltage temperature coefficient VF/Ta (mV/C) 300 2.4 100 50 30 2.0 1.6 1.2 10 Pulse width 10s 5 3 1 0.6 Repetitive frequency = 100Hz Ta = 25C 1.0 1.4 1.8 2.2 2.6 3.0 0.8 0.4 0.1 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2002-09-25 TLP197G IFT - Ta 5 A Connection ION = 120mA 4 150 Ta = 25C IF = 5mA ION - VON (A connection) (mA) (mA) On-state current ION 100 IFT 50 3 Trigger led current 0 2 50 1 100 0 40 20 0 20 40 60 80 100 150 2 1 0 1 2 Ambient temperature Ta (C) On-state voltage VON (V) RON - Ta 40 A Connection ION = 120mA 1000 500 IOFF - Ta VOFF = 350V () 30 RON (mA) Off-state current IOFF IF = 5mA 300 100 50 30 On-state resistance 20 10 5 3 1 20 10 0 40 20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) tON - Ta 1000 VDD = 20V RL = 200 800 400 VDD = 20V 350 RL = 200 IF = 5A 300 250 200 150 100 50 0 40 0 40 tOFF - Ta (s) tON 600 Turn-on time 400 200 20 0 20 40 60 80 100 turn-off time tOFF (s) IF = 5A 20 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) 5 2002-09-25 TLP197G RESTRICTIONS ON PRODUCT USE * 000707EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. * * * * * 6 2002-09-25 |
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