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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection.
4.9+/-0.15
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
1.0+/-0.05
2
FEATURES
*High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz *High Efficiency: 60%typ. (175MHz) *High Efficiency: 55%typ. (520MHz) *Integrated gate protection diode
3
(0.25)
INDEX MARK (Gate)
APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS2
MITSUBISHI ELECTRIC 1/9
17 Jan. 2006
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
UNIT V V W W A
C C C/W
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS 30 -5/+10 50 1.5 3 150 -40 to +125 2.5
SCHEMATIC
DRAWING
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout1 D1 Pout2 D2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f=175MHz,Idq=700mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(Pin Control) f=520MHz,Idq=750mA,Zg=50 Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD07MVS2
MITSUBISHI ELECTRIC 2/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0
Ta=+25C Vds=10V
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
60 CHANNEL DISSIPATION Pch(W) 50 40 30 20 10 0
On PCB(*1)
0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
On PCB(*1) with Heat-sink
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 10 9 8 7 Ids(A)
Vgs=4V Vgs=3.5V Ta=+25C Vgs=4.5V Vgs=5V
Vds VS. Ciss CHARACTERISTICS 160 140 120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
6 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10
Vgs=3V
Vds VS. Coss CHARACTERISTICS 120 100 80 Coss(pF) Crss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD07MVS2
MITSUBISHI ELECTRIC 3/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
Pin-Po CHARACTERISTICS @f=175MHz 100
Po
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25C f=175MHz Vdd=7.2V Idq=700mA
12.0 Po(dBm) , Gp(dB) , Idd(A) 40 30
Gp Po
80
10.0
d
Pout(W) , Idd(A)
80 d(%) 5 4
Idd
60 d(%) 40 20 0
8.0 6.0 4.0
Idd Ta=25C f=175MHz Vdd=7.2V Idq=700mA
20 10 0 -5 0 5 10 15 20 Pin(dBm) 25 30
60
40
2.0 0.0 0 500 Pin(mW) 20 1000
Pin-Po CHARACTERISTICS @f=520MHz
Ta=+25C f=520MHz Vdd=7.2V Idq=750mA
Pin-Po CHARACTERISTICS @f=520MHz 14.0 100 90
Po
Po(dBm) , Gp(dB) , Idd(A)
40 30 20 10 0 0
Po
80 60 d(%) 40 20 0 Pout(W) , Idd(A)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.0 0.5 Pin(W) 1.0 1.5
Idd
80
Ta=25C f=520MHz Vdd=7.2V Idq=750mA
d
Gp
60 50 40 30
5
10
15 20 Pin(dBm)
25
30
Vdd-Po CHARACTERISTICS @f=175MHz 30 25 20 Po(W) 15 10 5 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=175MHz Pin=0.3W Icq=700mA Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS @f=520MHz 6 5 4 Idd(A) 3 2 1 0 Po(W) 20 17.5 15
Idd Ta=25C f=520MHz Pin=0.7W Icq=750mA Zg=ZI=50 ohm Po
10 7.5 5 2.5 0 4 6 8 10 Vdd(V) 12 14 0 2 1
RD07MVS2
MITSUBISHI ELECTRIC 4/9
Idd(A)
17 Jan. 2006
12.5
3
d(%)
70
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2 10 8 6 Ids(A) 4 2 0 2 3 Vgs(V) 4 5 Vds=10V Tc=-25~+75C -25C +25C
+75C
RD07MVS2
MITSUBISHI ELECTRIC 5/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1 W 19m m 4.7kO HM R F-in 19.5m m 24.5m m R D 07MVS1 175MHz
RD07MVS2
19m m W 22pF L
C2
10uF,50V
1m m 11.5m m 3m m 68O HM
6.5m m 28.5m m 3.5m m 11.5m m
10m m
5m m R F-out
62pF 16pF 56pF
5m m 62pF 140pF 100pF
22pF 180pF
L: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D C1,C2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m W :line width=1.0m m
TEST CIRCUIT(f=520MHz)
Vgg Vdd
C1 W 19m m 4.7kO HM RF-in 46m m 68pF 37pF 10pF 20pF 6pF 18pF 9m m RD07MVS1 520MHz 3.5m m 3.5m m 3.5m m
RD07MVS2
20pF
19m m W L
C2
10uF,50V
6.5m m 6.5m m
44.5m m RF-out 68pF
L: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000pF,0.022uF in parallel
Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m W :ine width=1.0m m
RD07MVS2
MITSUBISHI ELECTRIC 6/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
175MHz Zout*
520MHz Zin* Zout* Zo=10
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06 Zout*=1.61-j0.52
520MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
520MHz Zout*
RD07MVS2
MITSUBISHI ELECTRIC 7/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
S12 S22 (ang) -9.4 -17.0 -18.8 -22.7 -28.8 -32.8 -37.7 -39.8 -38.9 -40.4 -43.4 -41.3 -52.0 -45.6 -52.8 -58.3 -53.1 -51.4 -52.0 -40.6 -21.3 -44.2 -13.4 (mag) 0.792 0.790 0.799 0.823 0.829 0.842 0.866 0.864 0.887 0.896 0.895 0.901 0.916 0.914 0.925 0.929 0.927 0.937 0.931 0.937 0.942 0.941 0.943 (ang) -173.5 -175.1 -174.8 -174.7 -175.4 -175.7 -176.3 -176.5 -177.3 -177.8 -177.8 -178.3 -179.4 -179.4 179.7 179.3 178.9 178.2 178.2 177.4 177.4 177.2 176.7 (mag) 0.015 0.015 0.014 0.015 0.014 0.012 0.012 0.011 0.010 0.009 0.008 0.008 0.007 0.007 0.006 0.004 0.005 0.004 0.003 0.003 0.002 0.001 0.002
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MSV2 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.899 0.903 0.903 0.909 0.911 0.919 0.923 0.927 0.931 0.934 0.939 0.940 0.942 0.944 0.948 0.948 0.950 0.953 0.951 0.954 0.954 0.956 0.956 (ang) -175.3 -177.2 -177.7 -178.4 -179.0 -179.6 179.7 178.9 178.5 177.8 177.6 177.3 176.8 176.2 175.6 175.4 174.7 174.3 174.1 173.5 173.2 172.9 172.7 (mag) 5.567 3.576 3.002 2.602 1.987 1.585 1.291 1.062 0.902 0.749 0.715 0.656 0.576 0.502 0.437 0.393 0.344 0.303 0.279 0.243 0.236 0.201 0.193 S21 (ang) 79.3 71.1 68.3 65.1 58.3 53.4 47.9 43.4 39.1 35.7 33.6 31.6 29.9 26.0 24.4 21.7 18.8 17.0 15.1 12.6 10.9 12.4 9.8
RD07MSV2 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100
RD07MVS2
S11 (mag) 0.897 0.899 0.904 0.906 0.910 0.919 0.926 0.929 0.936 0.937 0.939 0.943 0.942 0.947 0.949 0.949 0.951 0.955 0.956 0.953 0.955 0.956 0.955 (ang) -173.6 -176.0 -176.8 -177.3 -178.3 -179.0 -179.9 179.3 178.6 177.9 177.6 177.2 176.6 176.0 175.5 175.1 174.4 174.0 173.7 173.1 172.8 172.5 172.1 (mag) 5.995 3.832 3.224 2.776 2.100 1.662 1.356 1.107 0.925 0.788 0.732 0.668 0.582 0.505 0.444 0.380 0.347 0.314 0.283 0.252 0.234 0.212 0.187
S21 (ang) 78.6 69.8 66.6 62.8 56.4 50.8 45.0 40.4 36.5 31.8 30.8 28.9 26.1 22.2 20.9 17.8 14.6 15.7 11.8 11.8 7.8 8.5 4.0 (mag) 0.016 0.016 0.016 0.015 0.013 0.013 0.011 0.011 0.010 0.009 0.008 0.008 0.006 0.006 0.005 0.005 0.003 0.003 0.003 0.002 0.003 0.002 0.001
S12 (ang) -8.7 -15.9 -21.2 -22.5 -28.7 -30.5 -37.5 -44.2 -44.4 -49.0 -52.4 -55.9 -51.8 -59.2 -52.6 -58.1 -50.6 -51.6 -80.2 -53.3 -67.0 -30.6 15.8 (mag) 0.763 0.764 0.778 0.800 0.813 0.826 0.853 0.860 0.879 0.891 0.893 0.897 0.911 0.913 0.922 0.923 0.929 0.934 0.934 0.939 0.943 0.940 0.943
S22 (ang) -172.0 -173.3 -173.5 -173.2 -173.2 -174.1 -174.6 -175.0 -175.9 -176.5 -176.6 -177.3 -178.1 -178.6 -179.3 -179.8 179.9 179.1 179.0 178.1 178.0 177.8 177.2
17 Jan. 2006
MITSUBISHI ELECTRIC 8/9
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MVS2
MITSUBISHI ELECTRIC 9/9
17 Jan. 2006

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