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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.
TYPE NAME
0.8 MIN 2.5+/-0.1
FEATURES
*High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz *High Efficiency: 65%typ. *Integrated gate protection diode
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.1 MAX
RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V -5/+10 V Tc=25C 3.6 W Zg=Zl=50 60 mW 600 mA C 150 -40 to +125 C C/W Junction to case 34.5
SCHEMATIC
DRAWING
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS Vth Pout d PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 3 uA uA V W %
Note : Above parameters , ratings , limits and conditions are subject to change.
RD01MUS2
MITSUBISHI ELECTRIC 1/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
Vgs-Ids CHARACTERISTICS 1.2 1.0 0.8
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 520MHz,1W
4 CHANNEL DISSIPATION Pch(W)
3 Ids(A)
On PCB(*1) with Heat-sink
2
0.6 0.4
1
On PCB(*1)
0.2 0.0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C) 0 1 2 3 Vgs(V) 4 5
0
Vds-Ids CHARACTERISTICS 2.5
Ta=+25C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V
Vds VS. Ciss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0
Ta=+25C f=1MHz
2 1.5
Vgs=5V
1 0.5 0 0 2 4 6 Vds(V) 8 10
Vgs=4V
Vgs=3V
Ciss(pF)
Ids(A)
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 4
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS
Ta=+25C f=1MHz
3 Crss(pF)
Coss(pF)
2
1
0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20
RD01MUS2
MITSUBISHI ELECTRIC 2/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
RoHS Compliance, TYPICAL CHARACTERISTICS
Silicon MOSFET Power Transistor 520MHz,1W
Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -10 0 10 Pin(dBm) 20
Ta=+25C f=520MHz Vdd=7.2V Idq=100mA Gp Po
Pin-Po CHARACTERISTICS 80 70 Pout(W) , Idd(A) 60 d(%) 50 40 30 20 10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100
Po
80 d(%)
17 Jan. 2006
d
60 40 20 0
Idd
Ta=25C f=520MHz Vdd=7.2V Idq=100mA
20 40 Pin(mW)
60
Vdd-Po CHARACTERISTICS 4.0 3.5 3.0 Po(W) 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm Po
Vgs-Ids CHARACTORISTICS 2 0.8 0.7 0.6 Idd(A) Ids(A),GM(S) 2
Vds=10V Tc=-25~+75C -25C +25C
Idd
0.5 0.4 0.3 0.2 0.1 0.0
1
+75C
0 2 3 4 Vgs(V) 5 6
RD01MUS2
MITSUBISHI ELECTRIC 3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
Vdd
RoHS Compliance, TEST CIRCUIT(f=520MHz)
Vgg
Silicon MOSFET Power Transistor 520MHz,1W
C1 18m m
11m m
C2
10uF,50V
5m m 4.7kO HM 4m m R F-IN 62pF 24pF 240pF 68O HM 3pF 30m m 13m m
RD01MUS2 RD 01MUS1
68pF
6.5m m 4m m 5.5m m
L1 3m m
17.5m m 25.5m m 4m m RF-O UT 62pF 10pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C 1,C2: 1000pF,0.022uF in parallel
Note:Board m aterial-glass epoxi substrate Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zin* =3.11+j11.56 Zout*=11.64+j4.74
520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance
RD01MUS2
MITSUBISHI ELECTRIC 4/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
S12 (mag) 0.046 0.052 0.054 0.054 0.054 0.053 0.053 0.051 0.048 0.047 0.046 0.045 0.041 0.040 0.038 0.035 0.033 0.030 0.027 0.025 0.022 0.020 0.017 (ang) 36.0 21.1 15.3 10.8 3.0 -4.3 -7.8 -12.7 -17.1 -20.0 -21.0 -24.7 -25.0 -29.2 -31.4 -33.6 -35.2 -37.7 -37.8 -37.4 -37.8 -37.5 -34.9 (mag) 0.761 0.660 0.632 0.606 0.575 0.566 0.569 0.574 0.588 0.604 0.609 0.620 0.637 0.653 0.672 0.686 0.703 0.717 0.731 0.742 0.757 0.766 0.778 S22 (ang) -65.2 -85.2 -92.3 -98.0 -107.2 -114.1 -119.4 -123.7 -127.7 -131.0 -132.4 -134.3 -137.2 -139.7 -142.4 -144.6 -147.1 -149.3 -151.3 -153.6 -155.5 -157.6 -159.3
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.941 0.881 0.863 0.844 0.820 0.813 0.807 0.807 0.809 0.810 0.812 0.813 0.820 0.822 0.831 0.837 0.842 0.847 0.853 0.857 0.862 0.865 0.870 (ang) -83.9 -107.9 -116.7 -123.9 -134.4 -142.3 -148.3 -152.7 -156.9 -160.0 -161.2 -163.1 -165.6 -168.0 -170.1 -172.1 -174.0 -176.0 -177.9 -179.6 178.9 177.2 175.6 S21 (mag) (ang) 18.598 128.5 14.425 112.0 12.863 105.7 11.496 100.2 9.351 91.4 7.854 84.1 6.682 77.7 5.797 72.5 5.096 67.0 4.487 62.7 4.286 61.0 3.996 58.1 3.595 54.1 3.231 50.4 2.944 46.8 2.686 43.2 2.451 40.0 2.255 36.6 2.076 33.6 1.915 30.7 1.769 28.0 1.645 25.5 1.526 23.2
RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.957 0.902 0.884 0.867 0.843 0.831 0.824 0.821 0.823 0.824 0.826 0.825 0.829 0.833 0.839 0.843 0.849 0.854 0.858 0.862 0.869 0.870 0.876 (ang) -79.3 -103.4 -112.7 -120.1 -131.4 -139.8 -146.1 -150.9 -155.3 -158.6 -160.0 -161.9 -164.4 -167.2 -169.4 -171.5 -173.6 -175.4 -177.2 -179.0 179.4 177.6 175.9 S21 (mag) (ang) 18.576 131.4 14.762 114.9 13.236 108.3 11.888 102.6 9.751 93.5 8.210 86.0 7.005 79.5 6.079 74.1 5.343 68.6 4.726 64.2 4.523 62.2 4.226 59.6 3.792 55.6 3.429 51.5 3.117 47.7 2.837 44.2 2.597 41.1 2.397 37.6 2.196 34.7 2.034 31.8 1.890 29.0 1.745 26.2 1.625 23.4 S12 (mag) 0.041 0.049 0.049 0.051 0.051 0.050 0.050 0.048 0.046 0.043 0.044 0.042 0.040 0.037 0.035 0.033 0.030 0.028 0.026 0.022 0.020 0.018 0.017 (ang) 40.9 24.5 17.9 13.0 6.1 -1.5 -6.4 -11.2 -14.5 -19.2 -19.3 -21.9 -23.9 -27.8 -30.5 -31.2 -34.9 -35.3 -35.7 -37.5 -37.4 -37.7 -33.9 (mag) 0.740 0.642 0.615 0.592 0.559 0.553 0.553 0.559 0.573 0.589 0.594 0.605 0.622 0.639 0.656 0.675 0.691 0.705 0.718 0.732 0.745 0.757 0.770 S22 (ang) -59.4 -78.6 -85.4 -91.3 -100.5 -107.6 -112.9 -117.9 -122.0 -125.5 -127.1 -129.0 -132.0 -134.9 -137.8 -140.1 -143.0 -145.2 -147.6 -149.6 -151.9 -154.1 -156.0
RD01MUS2
MITSUBISHI ELECTRIC 5/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD01MUS2
MITSUBISHI ELECTRIC 6/6
17 Jan. 2006

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