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| PD - 91581B IRG4PC50S-P INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package * Surface Mountable C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Surface Mountable TO-247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Reflow Temperature Max. 600 70 41 140 140 20 20 200 78 -55 to + 150 225 Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Typ. --- 0.24 --- Max. 0.64 --- 40 Units C/W 1 www.irf.com 05/14/02 IRG4PC50S-P Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- Temperature Coeff. of Breakdown Voltage -- 0.75 -- 1.28 Collector-to-Emitter Saturation Voltage -- 1.62 -- 1.28 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -9.3 Forward Transconductance U 17 34 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 1.36 IC = 41A VGE = 15V -- IC = 80A See Fig.2, 5 V -- IC = 41A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 41A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 180 24 61 33 30 650 400 0.72 8.27 8.99 31 31 1080 620 15 13 4100 250 48 Max. Units Conditions 280 IC = 41A 37 nC VCC = 400V See Fig. 8 92 VGE = 15V -- -- TJ = 25C ns 980 IC = 41A, VCC = 480V 600 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 14 13 -- TJ = 150C, -- IC = 41A, VCC = 480V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 11, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50S-P 100 F o r b o th : T ria n g u la r wa v e : I 80 D uty cy c le: 50% T J = 125 C T s ink = 90C Ga te drive as s pec ified Load Current ( A ) P o w e r D i ss i p a tio n = 4 0 W C la m p v o lta g e : 8 0 % o f ra te d 60 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 40 I 20 Id e a l di o de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 o C 10 10 TJ = 150 o C TJ = 25 o C V = 15V 20s PULSE WIDTH GE 1 10 TJ = 25 oC V = 50V 5s PULSE WIDTH CC 5 6 7 8 9 10 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC50S-P 80 L IM IT E D B Y P A C K A G E V G E = 15 V 2.2 VCE , Collector-to-Emitter Voltage(V) M axim um D C C ollector C urrent (A) V = 15V 80 us PULSE WIDTH GE 2.0 I C = 82 A 60 1.8 1.6 40 1.4 I C = 41 A I C =20.5 A 20 1.2 1.0 0 25 50 75 100 125 150 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50S-P 8000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 41A 16 Cies 4000 12 8 2000 C oes C res 4 0 1 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10.0 Total Switching Losses (mJ) 9.5 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 41A 100 5.0 RG = Ohm VGE = 15V VCC = 480V IC = 82 A IC = 41 A 10 IC = 20.5 A 9.0 8.5 0 10 20 30 40 50 RG Gate Resistance ) RG , Gate Resistance ( (Ohm) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC50S-P 40 30 20 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE 5.0 = Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 10 10 0 0 20 40 60 80 SAFE OPERATING AREA 1 100 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC50S-P L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PC50S-P TO-247AC Package Outline Dimensions are shown in millimeters (inches) 3 .65 (.1 43 ) 3 .55 (.1 40 ) 0.25 (.0 1 0) M -A5 .50 (. 217 ) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2 3 -C14 .8 0 (.5 83 ) 14 .2 0 (.5 59 ) 4.3 0 (.1 70) 3.7 0 (.1 45) LE AD A S SIG N MEN TS 1 2 3 4 GA TE DR AIN SO UR C E DR AIN -DDBM 5 .3 0 (.2 09 ) 4 .7 0 (.1 85 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4 15 .90 (.6 26 ) 15 .30 (.6 02 ) -B- 2X 5.5 0 (.2 17) 4.5 0 (.1 77) NO TES : 1 D IME N SION ING & TO LE R AN CING P E R A NS I Y14.5M, 1982. 2 C ON TR OLLIN G D IME N SIO N : IN CH . 3 C ON F OR MS TO JED E C OU TLIN E T O-247-A C . 2 .40 (. 094 ) 2 .00 (. 079 ) 2X 5.45 (.21 5) 2X 1 .40 (.0 56 ) 3X 1 .00 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .40 (.13 3) 3 .00 (.11 8) C AS 0 .80 (.03 1) 3 X 0 .40 (.01 6) 2 .60 (.1 0 2) 2 .20 (.0 8 7) TO-247AC Part Marking Information E X A M P L E : T H IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LOT C ODE 3A1Q A IN T E R N A T IO N A L R E C T IF I E R LOGO PA R T NU M B E R IR F P E 30 3A1Q 9302 D ATE CO DE (Y Y W W ) Y Y = YE A R W W W EEK A S SE M B L Y LOT CODE Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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