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(R)
BUTW92
HIGH CURRENT NPN SILICON TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR
APPLICATIONS: MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY CONVERTERS
s
3
DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls.
2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IE I EM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter-Current Emitter Peak Current (t p < 5ms) Base Current Base Peak Current (t p < 5ms) Total Dissipation at T c 25 C
o
Value 500 250 7 60 70 15 18 180 -65 to 150 150
Unit V V V A A A A W
o o
Storage Temperature Max. Operating Junction Temperature
C C
September 2001
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BUTW92
THERMAL DATA
R thj-case Thermal Resistance Junction-case MAX 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO V CES V EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Collector-Emitter Voltage (V EB =0) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 450 V V CE = 450 V V EB = 5 V I C = 5 mA I E = 50 mA I C = 200 mA 500 7 250 T C = 100 o C Min. Typ. Max. 50 1 50 Unit A mA A V V V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B =0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = 60 A I C = 60 A I C = 60 A I C = 60 A I C = 60 A I C = 60 A IC = 5 A
I B = 15 A I B = 15 A I B = 15 A I B = 15 A
T C = 100 o C T C = 100 o C 9 6
0.8 1.1
1 1.5 1.9 2
V V V V
V CE = 3 V o V CE = 3 V T C = 100 C V CE = 3 V
65 1.2 250 1.4 300 s ns
ts tf
RESISTIVE LOAD Storage Time Fall Time
I C = 50 A V CC = 250 V I B1 = -IB2 = 10 A
* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
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BUTW92
TO-247 MECHANICAL DATA
mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
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BUTW92
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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