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| 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200303 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings 600 12 48 30 12 183 20 5 1.67 195 +150 Operating and storage -55 to +150 temperature range *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 600V = = = = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Unit V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Test Conditions VGS=0V ID=1mA ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 VCC=250V ID=10A VGS=10V L=2.33mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.75 Units V V A nA S pF 4 10 0.58 8 1200 1800 140 210 6 9 17 26 15 23 35 53 7 11 30 45 11 16.5 10 15 1.00 0.75 5.0 ns nC 12 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.641 75.0 Units C/W C/W 1 2SK3513-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 250 500 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V 200 400 350 IAS=5A 150 300 EAS [mJ] 0 25 50 75 100 125 150 PD [W] 250 IAS=8A 200 150 IAS=12A 100 50 100 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 22 20 18 10 16 14 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 12 7.0V 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VGS=6.5V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 2.0 VGS=6.5V 7.0V 1.5 RDS(on) [ ] 10 gfs [S] 1.0 7.5V8V 10V 20V 1 0.5 0.1 0.1 1 10 0.0 0 5 10 15 20 ID [A] ID [A] 2 2SK3513-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 1.8 1.6 1.4 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA max. VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 min. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics 24 22 20 18 16 480V Vcc= 120V 300V 1n VGS=f(Qg):ID=10A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 1p 10 -1 C [F] 100p Coss 10p Crss 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3513-01L,S,SJ Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=60V Avalanche Current I AV [A] Single Pulse 1 10 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 23 1 42 3 1 23 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4 |
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