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NE592 Video Amplifier The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 400 without external components and adjustable gain from 400 to 0 with one external resistor. Features http://onsemi.com MARKING DIAGRAMS 8 1 SOIC-8 D SUFFIX CASE 751 1 NE592 ALYW G * * * * * * * * * * * * 120 MHz Unity Gain Bandwidth Adjustable Gains from 0 to 400 Adjustable Pass Band No Frequency Compensation Required Wave Shaping with Minimal External Components MIL-STD Processing Available Pb-Free Packages are Available 8 1 PDIP-8 N SUFFIX CASE 626 1 NE592N8 AWL YYWWG Applications Floppy Disk Head Amplifier Video Amplifier Pulse Amplifier in Communications Magnetic Memory Video Recorder Systems +V R1 R2 R8 R10 R9 Q6 Q5 Q4 Q3 R11 OUTPUT 1 14 1 SOIC-14 D SUFFIX CASE 751A 1 NE592D14G AWLYWW 1 14 PDIP-14 N SUFFIX CASE 646 1 NE592N14 AWLYYWWG INPUT 1 Q1 G1A R3 G2A Q2 INPUT 2 G1B R5 G2B R12 OUTPUT 2 A L, WL Y, YY W, WW G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package ORDERING INFORMATION Q9 Q10 See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Q11 R14 -V Q7A Q7B Q8 R7A R7B R15 R16 R13 Figure 1. Block Diagram (c) Semiconductor Components Industries, LLC, 2006 October, 2006 - Rev. 4 1 Publication Order Number: NE592/D NE592 PIN CONNECTIONS D, N Packages INPUT 2 NC G2B GAIN SELECT G1B GAIN SELECT VNC OUTPUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 INPUT 1 NC G2A GAIN SELECT G1A GAIN SELECT V+ NC OUTPUT 1 INPUT 2 G1B GAIN SELECT 1 2 4 D, N Packages 8 7 6 5 INPUT 1 G1A GAIN SELECT V+ OUTPUT 1 V- 3 OUTPUT 2 (Top View) (Top View) MAXIMUM RATINGS (TA = +25C, unless otherwise noted.) Rating Supply Voltage Differential Input Voltage Common-Mode Input Voltage Output Current Operating Ambient Temperature Range Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation, TA = 25C (Still Air) (Note 1) D-14 Package D-8 Package N-14 Package N-8 Package D-14 Package D-8 Package N-14 Package N-8 Package Symbol VCC VIN VCM IOUT TA TJ TSTG PD MAX 0.98 0.79 1.44J1.17 RqJA 145 182 100 130 C/W Value "8.0 "5.0 "6.0 10 0 to +70 150 65 to +150 Unit V V V mA C C C W Thermal Resistance, Junction-to-Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Derate above 25C at the following rates: D-14 package at 6.9 mW/C D-8 package at 5.5 mW/C N-14 package at 10 mW/C N-8 package at 7.7 mW/C. http://onsemi.com 2 NE592 DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25C, min and max at 0C v TA v 70C, unless otherwise noted. Recommended operating supply voltages VS = "6.0 V.) Characteristic Differential Voltage Gain Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Resistance Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Capacitance Input Offset Current Input Bias Current Input Noise Voltage Input Voltage Range Common-Mode Rejection Ratio Gain 2 (Note 4) Test Conditions RL = 2.0 kW, VOUT = 3.0 VP-P Symbol AVOL Min 250 80 - 10 8.0 - - - - - - "1.0 60 50 - PSRR VOS 50 Typ 400 100 4.0 30 - 2.0 0.4 - 9.0 - 12 - 86 - 60 70 Max 600 120 - - - - 5.0 6.0 30 40 - - - - - - dB V Unit V/V - TA = 25C 0C v TA v 70C Gain 2 (Note 4) TA = 25C 0C v TA v 70C TA = 25C 0C v TA v 70C BW 1.0 kHz to 10 MHz - VCM "1.0 V, f < 100 kHz, TA = 25C VCM "1.0 V, f < 100 kHz, 0C v TA v 70C VCM "1.0 V, f < 5.0 MHz DVS = "0.5 V RIN kW CIN IOS IBIAS VNOISE VIN CMRR pF mA mA mVRMS V dB Supply Voltage Rejection Ratio Gain 2 (Note 4) Output Offset Voltage Gain 1 Gain 2 (Note 4) Gain 3 (Note 5) Gain 3 (Note 5) Output Common-Mode Voltage Output Voltage Swing Differential Output Resistance Power Supply Current RL = R RL = R RL = R, TA = 25C RL = R, 0C v TA v 70C RL = R, TA = 25C RL = 2.0 kW, TA = 25C RL = 2.0 kW, 0C v TA v 70C - RL = R, TA = 25C RL = R, 0C v TA v 70C - - - - 2.4 3.0 2.8 - - - - - 0.35 - 2.9 4.0 - 20 18 - 1.5 1.5 0.75 1.0 3.4 - - - 24 27 VCM VOUT ROUT ICC V V W mA supply voltages VS = "6.0 V.) Characteristic Bandwidth Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Rise Time Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Propagation Delay Gain 1 (Note 2) Gain 2 (Notes 3 and 4) 2. 3. 4. 5. AC ELECTRICAL CHARACTERISTICS (TA = +25C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating Test Conditions - Symbol BW Min - - - - - - Typ 40 90 10.5 4.5 7.5 6.0 Max - - 12 - 10 - Unit MHz VOUT = 1.0 VP-P tR ns VOUT = 1.0 VP-P tPD ns Gain select Pins G1A and G1B connected together. Gain select Pins G2A and G2B connected together. Applies to 14-pin version only. All gain select pins open. http://onsemi.com 3 NE592 TYPICAL PERFORMANCE CHARACTERISTICS COMMON-MODE REJECTION RATIO - dB 100 OUTPUT VOLTAGE SWING - Vpp 90 80 70 60 50 40 30 20 10 0 10k 100k 1M 10M 100M GAIN 2 VS = +6V TA = 25oC 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 VS = +6V TA = 25oC RL = 1kW 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 1 5 10 50 100 500 1000 -0.4 -15 -10 -5 0 5 10 15 20 25 30 35 GAIN 2 GAIN 1 VS = +6V TA = 25oC RL = 1k FREQUENCY - Hz FREQUENCY - MHz TIME - ns Figure 2. Common-Mode Rejection Ratio as a Function of Frequency Figure 3. Output Voltage Swing as a Function of Frequency Figure 4. Pulse Response 28 TA = 25oC SUPPLY CURRENT - mA 24 OUTPUT VOLTAGE - V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 GAIN 2 TA = 25oC RL = 1kW 1.6 1.4 OUTPUT VOLTAGE - V VS = +8V VS = +6V VS = +3V 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 0 5 10 15 20 25 30 35 TIME - ns -15 -10 -5 0 5 10 15 20 25 30 35 Tamb = 0oC TA = 25oC TA = 70oC GAIN 2 VS = +6V RL = 1kW 20 16 12 8 3 4 5 6 7 8 SUPPLY VOLTAGE - +V -0.4 -15 -10 -5 TIME - ns Figure 5. Supply Current as a Function of Temperature Figure 6. Pulse Response as a Function of Supply Voltage Figure 7. Pulse Response as a Function of Temperature SINGLE ENDED VOLTAGE GAIN - dB 1.10 1.08 RELATIVE VOLTAGE GAIN 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 0 10 20 30 40 50 60 70 GAIN 1 GAIN 2 VS = +6V 60 50 40 30 20 10 0 -10 1 5 10 TA = -55oC TA = 25oC TA = 125oC 1.4 GAIN 2 VS = +6V RL = 1kW 1.3 RELATIVE VOLTAGE GAIN 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 50 100 500 1000 3 4 5 6 7 8 FREQUENCY - MHz SUPPLY VOLTAGE - +V GAIN 1 GAIN 2 Tamb = 25oC TEMPERATURE - oC Figure 8. Voltage Gain as a Function of Temperature Figure 9. Gain vs. Frequency as a Function of Temperature Figure 10. Voltage Gain as a Function of Supply Voltage http://onsemi.com 4 NE592 TYPICAL PERFORMANCE CHARACTERISTICS 60 50 40 30 20 10 0 -10 VS = +6V VS = +3V 1 5 10 50 100 500 1000 VS = +8V 51W 51W RADJ 1kW 1kW GAIN 2 TA = 25oC RL = 1kW 0.2mF 14 1 12 11 4 8 7 0.2mF DIFFERENTIAL VOLTAGE GAIN - V/V 1000 VS = +6V f = 100kHz TA = 25oC FIGURE 2 SINGLE ENDED VOLTAGE GAIN - dB 100 592 3 10 1 .1 VS = +6V TA = 25oC .01 1 10 100 1K 10K 100K 1M RADJ - W FREQUENCY - MHz Figure 11. Gain vs. Frequency as a Function of Supply Voltage Figure 12. Voltage Gain Adjust Circuit Figure 13. Voltage Gain as a Function of RADJ (Figure 2) OVERDRIVE RECOVERY TIME - ns 21 20 19 18 17 16 15 14 -60 VS = +6V 70 60 50 40 30 20 10 0 -20 20 60 100 140 0 20 40 60 80 100 120 140 160 180 200 DIFFERENTIAL INPUT VOLTAGE - mV TEMPERATURE - oC OUTPUT VOLTAGE SWING - V OR OUTPUT SINK CURRENT - mA VS = +6V TA = 25oC GAIN 2 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 3.0 4.0 5.0 6.0 7.0 SUPPLY VOLTAGE - +V 8.0 VOLTAGE CURRENT TA = 25oC SUPPLY CURRENT - mA Figure 14. Supply Current as a Function of Temperature Figure 15. Differential Overdrive Recovery Time Figure 16. Output Voltage and Current Swing as a Function of Supply Voltage 7.0 OUTPUT VOLTAGE SWING - Vpp 6.0 5.0 4.0 3.0 2.0 1.0 0 10 50 100 500 1K LOAD RESISTANCE - W 5K 10K VS = +6V TA = 25oC 70 INPUT RESISTANCE - K 60 50 40 30 20 10 0 -60 INPUT NOISE VOLTAGE - Vrms GAIN 2 VS = +6V 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1K SOURCE RESISTANCE - W 10K GAIN 2 VS = +6V TA = 25oC BW = 10MHz -20 0 20 60 100 TEMPERATURE - oC 140 Figure 17. Output Voltage Swing as a Function of Load Resistance Figure 18. Input Resistance as a Function of Temperature Figure 19. Input Noise Voltage as a Function of Source Resistance http://onsemi.com 5 NE592 TYPICAL PERFORMANCE CHARACTERISTICS 0 GAIN 2 VS = +6V TA = 25oC 0 -50 -100 -150 -200 -250 -300 -350 0 1 2 3 4 5 6 7 8 9 10 1 10 100 FREQUENCY - MHz 1000 GAIN 1 GAIN 2 VS = +6V TA = 25oC PHASE SHIFT - DEGREES -10 -15 -20 -25 FREQUENCY - MHz Figure 20. Phase Shift as a Function of Frequency PHASE SHIFT - DEGREES -5 Figure 21. Phase Shift as a Function of Frequency 60 50 VOLTAGE GAIN - dB 40 30 20 10 0 GAIN 1 GAIN 2 VOLTAGE GAIN - dB VS = +6V Tamb = 25oC RL = 1KW 40 30 20 10 0 -10 -20 -30 -40 -50 .01 VS = +6V TA = 25oC GAIN 3 1 10 100 1000 .1 FREQUENCY - MHz 1 10 100 FREQUENCY - MHz 1000 Figure 22. Voltage Gain as a Function of Frequency Figure 23. Voltage Gain as a Function of Frequency TEST CIRCUITS (TA = 25C, unless otherwise noted.) VIN 592 RL VOUT 51W 51W 0.2mF ein 592 0.2mF eout eout 51W 51W 1kW 1kW Figure 24. Test Circuits http://onsemi.com 6 NE592 2re 11 +6 14 V1 [ 1.4 @ 10 4 Z(S) ) 2re 1.4 @ 104 Z(S) ) 32 10 V0 5 7 NOTE: V 0(s) v 1(s) 1 592 4 Z -6 Basic Configuration +5 +6 10 1 10 8 7 2 9 4 8 529 [ +6 0.2mF 14 V1 Q 11 10 8 592 2KW V0 14 11 7 1 4 5 7 0.2mF 592 1 4 5 5 C Q 2KW AMPLITUDE: 1-10 mV p-p FREQUENCY: 1-4 MHz -6 3 6 -6 NOTE: For frequency F1 << 1/2 (32) C V ] 1.4 x 10 4C dVi dT READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR O Disc/Tape Phase-Modulated Readback Systems Differentiation with High Common-Mode Noise Rejection Figure 25. Typical Applications Z NETWORK FILTER TYPE V0 (s) TRANSFER V1 (s) FUNCTION 1.4 10 4 1 s)R L R L LOW PASS L R C HIGH PASS 1.4 R 10 4 s s ) 1 RC R L C BAND PASS 1.4 L 10 4 s s 2 ) R Ls ) 1 LC L R C 1.4 10 4 s 2 ) 1 LC s 2 ) 1 LC ) s RC BAND REJECT R NOTES: In the networks above, the R value used is assumed to include 2re, or approximately 32W. S = jW W = 2f Figure 26. Filter Networks http://onsemi.com 7 NE592 ORDERING INFORMATION Device NE592D8 NE592D8G NE592D8R2 NE592D8R2G NE592N8 NE592N8G NE592D14 NE592D14G NE592D14R2 NE592D14R2G NE592N14 NE592N14G 0 to +70C Temperature Range Package SOIC-8 SOIC-8 (Pb-Free) SOIC-8 SOIC-8 (Pb-Free) PDIP-8 PDIP-8 (Pb-Free) SOIC-14 SOIC-14 (Pb-Free) SOIC-14 SOIC-14 (Pb-Free) PDIP-14 PDIP-14 (Pb-Free) 25 Units/Rail 2500 / Tape & Reel 55 Units/Rail 50 Units/Rail 2500 / Tape & Reel 98 Units/Rail Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 8 NE592 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AH -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 A 8 5 B 1 S 4 0.25 (0.010) M Y M -Y- G K C -Z- H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NE592 PACKAGE DIMENSIONS PDIP-8 N SUFFIX CASE 626-05 ISSUE L NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --- 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --- 10_ 0.030 0.040 8 5 -B- 1 4 F NOTE 2 -A- L C -T- SEATING PLANE J N D K M M TA M H G 0.13 (0.005) B M http://onsemi.com 10 NE592 PACKAGE DIMENSIONS SOIC-14 CASE 751A-03 ISSUE H -A- 14 8 -B- P 7 PL 0.25 (0.010) M B M 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. G C -T- SEATING PLANE R X 45 _ F D 14 PL 0.25 (0.010) K M M S J TB A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 SOLDERING FOOTPRINT* 7X 7.04 1 0.58 14X 14X 1.52 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 NE592 PACKAGE DIMENSIONS PDIP-14 CASE 646-06 ISSUE P 14 8 B 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 --- 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 --- 10 _ 0.38 1.01 A F N -T- SEATING PLANE L C H G D 14 PL K M J M DIM A B C D F G H J K L M N 0.13 (0.005) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 12 NE592/D |
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