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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. KTA2014V EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Complementary to KTC4075V. Very Small Package. A G B 1 H 3 K P P MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -50 -50 -5 -150 -30 100 150 -55 150 UNIT V V V mA mA mW C 1. EMITTER 2. BASE 3. COLLECTOR VSM Marking Type Name h FE Rank S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO IEBO hFE (Note) VCE(sat) fT Cob NF ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10k 400 MIN. 70 80 TYP. -0.1 4 1.0 MAX. -0.1 -0.1 400 -0.3 7 10 V MHz pF dB UNIT A A SYMBOL Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 2001. 7. 20 Revision No : 0 J D Low Noise : NF=1dB(Typ.), 10dB(Max.). 2 DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 + 0.05 H 0.40 _ J 0.12 + 0.05 _ K 0.2 + 0.05 P 5 1/3 KTA2014V I C - VCE -240 COLLECTOR CURRENT I C (mA) I B =-2.0mA COMMON EMITTER Ta=25 C I B =-1.5mA I B =-1.0mA h FE - I C 3k COMMON EMITTER DC CURRENT GAIN h FE -200 -160 -120 -80 -40 0 1k 500 300 Ta=100 C Ta=25 C VCE =-6V I B =-0.5mA I B =-0.2mA I B =0mA 100 50 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 VBE(sat) - I C -10 -5 -3 COMMON EMITTER I C/I B=10 Ta=25 C -0.1 -0.05 -0.03 = Ta 10 0 C -1 -0.5 -0.3 Ta=25 C Ta=-25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 -0.1 COMMON EMITTER VCE =-10V Ta=25 C I B - V BE -1k BASE CURRENT IB (A) -300 -100 Ta=2 5C Ta=-2 5C 00 C COMMON EMITTER VCE =-6V -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.3 -1 -3 -10 -30 -100 -300 Ta=1 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2001. 7. 20 Revision No : 0 2/3 KTA2014V COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2001. 7. 20 Revision No : 0 3/3 |
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