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Ordering number : ENN7183
CPH6605
N-Channel and P-Channel Silicon MOSFETs
CPH6605
Load Switching Applications
Features
*
Package Dimensions
* * *
Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used for driving the P-channel MOSFET. Optimal for load switch use. Excellent ON-resistance characteristic. 2.5V drive.
[CPH6605]
6 5 4 0.6 0.05 1.6 2.8 0.2
P-channel -20 10 --1.5 --6.0 0.8 150 --55 to +150
2.9
0.15
1
2
0.4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 10 0.65 2.6
0.7 0.9
0.2
3 0.95
0.6
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : CPH6
Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=150mA ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V 30 10 10 0.4 400 560 0.9 1.2 2.6 1.2 1.7 5.2 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : FQ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM 83002 TS IM TA-100118 No.7183-1/6
CPH6605
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--800mA ID=-800mA, VGS=--4V ID=-400mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--4V, ID=--1.5A VDS=-10V, VGS=--4V, ID=--1.5A VDS=-10V, VGS=--4V, ID=--1.5A IS=--1.5A, VGS=0 --0.4 1.6 2.3 180 240 290 40 25 10 35 32 27 3.2 0.8 0.6 --0.82 --1.2 235 340 --20 --1 10 --1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA IS=300mA, VGS=0 Ratings min typ 30 15 10 32 110 250 160 2.34 0.38 0.45 0.8 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Electrical Connection
6 5 4
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
1 2 3 Top view
Switching Time Test Circuit [N-channel]
VIN 4V 0V VIN ID=150mA RL=100 VOUT VDD=15V
[P-channel]
VIN 0V --4V VIN ID= --800mA RL=12.5 VOUT VDD= --10V
D
PW=10s D.C.1%
D
PW=10s D.C.1%
G
CPH6605 P.G 50
G
CPH6605 P.G 50
S
S
No.7183-2/6
CPH6605
0.30
ID -- VDS
2.5 V
[Nch]
--2.0 --1.8 --1.6
ID -- VDS
--6.0 V -4.0V
--3. 0 --2 V .5V --2 .0V
[Pch]
0.25
3.5V 4.0V
3.0V
Drain Current, ID -- A
6.0V
Drain Current, ID -- A
2 .0
0.20
V
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2
0.15
VGS= --1.5V
VGS=1.5V
0.10
0.05
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Drain-to-Source Voltage, VDS -- V
0.6
IT00224
ID -- VGS
[Nch]
--2.0
Drain-to-Source Voltage, VDS -- V
IT02654
ID -- VGS
[Pch] VDS= --10V
75
VDS=10V
0.5
C
25C
--1.8 --1.6
Drain Current, ID -- A
Ta= --
25
C
Drain Current, ID -- A
0.4
--1.4 --1.2 --1.0 --0.8
0.3
75 C
Ta =
5 C
0 0 0.5 1.0
--2
25
--0.2 0 2.0 2.5 IT00225 0 --0.5 --1.0
1.5
--25
--1.5
0.1
C
C
--0.4
Ta= 7
5C
--0.6
25
--2.0
0.2
C
--2.5 IT02655
Gate-to-Source Voltage, VGS -- V
3.0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
600
[Nch] Ta=25C
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
500
2.0
400
1.5
300
ID=150mA 80mA
1.0
200
ID= --0.4A
--0.8A
0.5
100
0 0 1 2 3 4 5 6 7 8 9 10
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
3.0
IT00226
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
500
IT02656
[Nch]
RDS(on) -- Ta
[Pch]
2.5
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) --
400
2.0
300
1.5
1.0
= A, VGS 80m I D= =4.0V A, V GS =150m ID
2.5V
200
V --2.5 S= A, VG --0.4 V I D= = --4.0 A, V GS 0.8 I D= --
0.5
100
0 --60
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- C
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
IT00230
Ambient Temperature, Ta -- C
IT02657
No.7183-3/6
CPH6605
10
|yfs| -- ID
[Nch] Forward Transfer Admittance, yfs -- S VDS=10V
10 7 5 3 2
yfs -- ID
[Pch] VDS= --10V
Forward Transfer Admittance, |yfs| -- S
7 5 3 2
1.0 7 5 3 2
1.0 7 5 3 2
--25 Ta=
C
75 C
C -25 =Ta C 75
25
C
25
C
0.1 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0 7 5
1.0 IT00231
7
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
IF -- VSD
[Nch] VGS=0
Drain Current, ID -- A
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IT02658
IF -- VSD
[Pch] VGS=0
Forward Current, IF -- A
3 2
0.1 7 5 3 2
Forward Current, IF -- A
Ta=7 5C 25C --25C
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT00232
--0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V
1000 7
Diode Forward Voltage, VSD -- V
100 7
Ta=7 5
C 25C --25C
IT02659
SW Time -- ID
Switching Time, SW Time -- ns
Switching Time, SW Time -- ns
5 3 2
[Nch] VDD=15V VGS=4V
SW Time -- ID
VDD= --10V VGS= --4V
td(off)
[Pch]
td(off)
tf tr
5
3 2
tf
100 7 5
tr
10 7 5 3
td(on)
td(on)
3 2
10 0.01
2
3
5
7
0.1
2
3
5 IT00233
3
5
7
--0.1
2
3
5
7 --1.0
2
3
5
Drain Current, ID -- A
100 7 5
Drain Current, ID -- A
1000 7 5
IT02660
Ciss, Coss, Crss -- VDS
[Nch] f=1MHz
Ciss, Coss, Crss -- VDS
[Pch] f=1MHz
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
3 2
Ciss
3 2
Ciss
10 7 5 3 2
Coss Crss
100 7 5 3 2
Coss
Crss
1.0 0 5 10 15 20 25 30 IT00234
10 0 --5 --10 --15 --20 IT02661
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No.7183-4/6
CPH6605
10 9
VGS -- Qg
VDS=10V ID=300mA
[Nch]
--4
VGS -- Qg
VDS= --10V ID= --1.5A
[Pch]
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 IT00235
Gate-to-Source Voltage, VGS -- V
--3
--2
--1
0 0 0.5 1 1.5 2 2.5 3 3.5 IT02662
Total Gate Charge, Qg -- nC
10 7 5 3 2
Total Gate Charge, Qg -- nC
--10 7 5
ASO
IDP=2.6A <10s 1m s
[Nch]
ASO
IDP= --6.0A
3 2
[Pch] <10s 1m s
Drain Current, ID -- A
Drain Current, ID -- A
ID= --1.5A
10
10
DC op era
ms
1.0 7 5 3 2 0.1 7 5 3 2
ID=0.65A
10
ms
DC
Operation in this area is limited by RDS(on).
10
op era
0m
n
--1.0 7 5 3 2 --0.1 7 5 3 2
0m
s
s
tio
Operation in this area is limited by RDS(on).
tio
n
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit
2 3 5 7 --1.0 2 3 5 7 --10 2 3
1.0
Drain-to-Source Voltage, VDS -- V IT04067 PD -- Ta [Pch, Nch]
Drain-to-Source Voltage, VDS -- V
IT04068
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
0.4
ar
d(
90
0m
m2 !0
0.2
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Amibient Tamperature, Ta -- C
IT04069
No.7183-5/6
CPH6605
Note on usage : Since the CPH6605 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice.
PS No.7183-6/6

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