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APT25GP120B
1200V
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7(R) IGBT provides a lower cost alternative to a Power MOSFET.
TO-247
(R)
G
C
E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 800V,11A * 50 kHz operation @ 800V, 19A * RBSOA Rated
G
C
E
All Ratings: TC = 25C unless otherwise specified.
APT25GP120B UNIT
1200 20 30 69 33 90 90A @ 960V 417 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 25C
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3.0 250
2
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
4-2003 050-7411 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic IInput Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT25GP120B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 25A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCLAMP(Peak) = 600V VGE = 15V I C = 25A
4 5
MIN
TYP
MAX
UNIT
2090 200 40 7.5 110 15 50 90 12 14 70 39 500 1092 438 12 14 109 88 500 1577 1187
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCLAMP(Peak) = 600V VGE = 15V I C = 25A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.30 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7411
Rev B
4-2003
TYPICAL PERFORMANCE CURVES
60 50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT25GP120B
60 50
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
40
IC, COLLECTOR CURRENT (A)
40
30
30 20 TC=125C 10 0 TC=25C
20 TC=125C
TC=25C
10 0
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 100
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 120 VCE= 960V
IC = 25A TJ = 25C
VCE= 240V VCE= 600V
IC, COLLECTOR CURRENT (A)
80
60 TJ = -55C 40 TJ = 125C TJ = 25C 20
0
0
23 456 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC= 50A IC= 25A IC= 12.5A
IC= 50A IC= 25A
IC=12.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0 25 50 75 100 125 TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 100
0 -25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.8 -50
90 80 70 60 50 40 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
4-2003 050-7411 Rev B
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT25GP120B
25
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
140 120 100 80 60 40 20 0 10 15 20 25 30 35 40 45 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 RG = 5, L = 100H, VCE = 600V 100
TJ = 25 or 125C,VGE = 10V VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C VCE = 600V RG = 5 L = 100 H
20 VGE= 10V 15 VGE= 15V
10
5
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H 10
0 15 20 25 30 35 40 45 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 R = 5, L = 100H, VCE = 600V G 80
tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
60
60
40
40
TJ = 25C, VGE = 10V or 15V
20
TJ = 25 or 125C,VGE =15V
20 0
15 20 25 30 35 40 45 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3500
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
0
10
10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3000
VCE = 600V VGE = +15V RG = 5
3000 2500 2000 1500
TJ = 25C,VGE =10V TJ = 125C,VGE =10V
2500
TJ = 125C, VGE = 10V or 15V
2000
1500
TJ = 125C,VGE =15V
1000
1000 500 0
TJ = 25C,VGE =15V
500
TJ = 25C, VGE = 10V or 15V
0 10 15 20 25 30 35 40 45 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3500 Eon2, 50A
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
10 15 20 25 30 35 40 45 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4500
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
4000 3500 3000 2500 2000 1500 1000 500 0 0
Eon2,50A
3000 2500 2000 1500 1000 500 0
Eoff, 50A Eon2, 25A Eoff, 25A Eon2, 12.5A Eoff, 12.5A
Eon2,25A Eoff,50A Eoff, 25A
4-2003
Eon2,12.5A Eoff,12.5A
Rev B
050-7411
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 5,000 Cies
C, CAPACITANCE ( F)
P
APT25GP120B
100 90 80
1,000 500 Coes 100 Cres
IC, COLLECTOR CURRENT (A)
70 60 50 40 20 0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.3
Z
JC
0.1 0.05 10-5 10-4
SINGLE PULSE 1.0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
182
FMAX, OPERATING FREQUENCY (kHz)
100
RC MODEL Junction temp (C) 0.128 Power (watts) 0.173 Case temperature(C) 0.171F 0.00833F
50
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10 5
TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5
TJ - TC R JC
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
050-7411
Rev B
4-2003
APT25GP120B
APT15DF120
Gate Voltage 10% t d(on) T J = 125 C
V CC
IC
V CE
A D.U.T.
tr 90% 5% 10% 5%
Collector Current
Collector Voltage Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage T J = 125 C
VTEST *DRIVER SAME TYPE AS D.U.T.
td(off)
tf
Collector Voltage
A V CE IC 100uH V CLAMP B
90% 10% Switching Energy
0 Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
4-2003
Gate Collector Emitter
Rev B
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7411

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