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| Ordering number : ENA0380 SCH2615 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs SCH2615 Features * General-Purpose Switching Device Applications Composite type with two MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit Conditions N-channel 15 10 1.2 4.8 0.65 150 --55 to +150 P-channel -12 8 --0.9 --3.6 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=15V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=600mA ID=600mA, VGS=4V ID=300mA, VGS=2.5V ID=60mA, VGS=1.8V 15 1 10 0.4 0.84 1.4 280 400 630 365 560 950 1.3 V A A V S m m m Symbol Conditions Ratings min typ max Unit Marking : FQ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62007PE TI IM TC-00000767 No. A0380-1/6 SCH2615 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=6.4V, VDS=0V VDS=--6V, ID=--100A VDS=--6V, ID=--500mA ID=--500mA, VGS=-4.5V ID=--300mA, VGS=-2.5V ID=--100mA, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-0.9A VDS=--6V, VGS=--4.5V, ID=-0.9A VDS=--6V, VGS=--4.5V, ID=-0.9A IS=--0.9A, VGS=0V --12 --10 10 --0.3 0.6 1 470 690 920 92 26.5 18 8.2 3.5 9.5 15.5 1.43 0.31 0.26 --0.98 --1.5 615 970 1520 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=1.2A VDS=10V, VGS=4V, ID=1.2A VDS=10V, VGS=4V, ID=1.2A IS=1.2A, VGS=0V Ratings min typ 57 20 7.2 9 16 11.5 8 1.15 0.4 0.26 0.89 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7028-006 Electrical Connection 6 1.6 5 4 0.05 0.2 654 0.2 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1.6 1.5 0.05 1 23 0.5 0.56 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 0.25 No. A0380-2/6 SCH2615 Switching Time Test Circuit [N-channel] VDD=10V VIN VIN ID=600mA RL=16.7 VIN VIN [P-channel] VDD= --6V ID= --0.5A RL=12 4V 0V D VOUT 0V --4.5V D VOUT PW=10s D.C.1% PW=10s D.C.1% G G P.G 50 SCH2615 P.G S 50 SCH2615 S 1.2 ID -- VDS 6.0V [Nch] --0.9 --0.8 ID -- VDS V [Pch] 4.0V 3.0 V 2.5 V --2 .5V --4. 5 8.0V --0.7 Drain Current, ID -- A Drain Current, ID -- A 0.8 --0.6 --0.5 --0.4 --0.3 --0.2 --6. 0 V --3 .0 1.0 1.8V . --1 V 8V --1.5V 0.6 VGS=1.5V 0.4 0.2 --0.1 0 0 0.2 0.4 0.6 0.8 1.0 IT10900 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 VGS= --1.0V --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 25C 1.2 ID -- VGS Drain-to-Source Voltage, VDS -- V --0.9 IT09195 [Nch] 75 C ID -- VGS [Pch] 25 C 1.0 Ta= -- --0.8 --0.7 Drain Current, ID -- A 0.8 Drain Current, ID -- A --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0.6 0.4 Ta = --25 Ta = 0.2 0 0 0.5 1.0 1.5 2.0 2.5 IT10901 0 --0.5 --1.0 25 --1.5 C --25 C 75 C 25 C C 75 C Ta= --25 C 25 7 C 5C --2.0 VDS=10V VDS= --6V --2.5 IT10902 Gate-to-Source Voltage, VGS -- V 1000 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 2000 [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 1800 1600 1400 1200 1000 800 600mA 300mA 600 ID= --100mA --300mA --500mA ID=60mA 400 800 600 400 200 0 0 --1 --2 --3 --4 --5 --6 IT09197 200 0 0 2 4 6 8 IT10903 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V No. A0380-3/6 SCH2615 1000 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 2000 1800 1600 1400 1200 1000 800 600 400 200 0 --60 --40 --20 0 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 800 600 =60m V, I D =1.8 VGS A 400 3 , I D= =2.5V VGS A =600m .0V, I D V GS=4 00mA = VGS A --300m V, I D= = --2.5 V GS A = --500m 4.5V, I D V GS= -- --10 , I D= --1.8V 0mA 200 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 3 IT10904 Ambient Temperature, Ta -- C 3 IT09198 yfs -- ID VDS=10V [Nch] Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.001 yfs -- ID [Pch] VDS= --6V Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 0.1 7 5 3 2 Ta -2 =- C 5 C 75 25 C C 25 C 5 --2 C a= T 75 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 3 2 1.0 5 7 1.0 IT10905 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 IS -- VSD Drain Current, ID -- A 3 2 --1.0 7 5 5 7 --1.0 IT10906 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A Source Current, IS -- A 7 5 3 2 3 2 --0.1 7 5 3 2 7 5 3 2 0.01 0.2 Ta= 7 0.1 5C 25C --25 C 3 2 0.4 0.6 0.8 1.0 1.2 IT10907 --0.001 --0.25 --0.50 --0.75 --25C --1.00 25C --0.01 7 5 Ta=75 C --1.25 --1.50 IT09200 Diode Forward Voltage, VSD -- V 3 2 SW Time -- ID Diode Forward Voltage, VSD -- V 100 7 5 [Nch] VDD=10V VGS=4V Switching Time, SW Time -- ns SW Time -- ID td (off) [Pch] VDD= --6.0V VGS= --4.5V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.01 3 2 10 7 5 3 2 1.0 7 5 3 2 tf td(on) tf td(off) td(on) tr tr 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 7 1.0 IT10908 0.1 --0.01 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 7 --1.0 IT09201 No. A0380-4/6 SCH2615 100 7 Ciss, Coss, Crss -- VDS Ciss [Nch] f=1MHz 3 2 Ciss, Coss, Crss -- VDS [Pch] f=1MHz Ciss, Coss, Crss -- pF 5 Ciss, Coss, Crss -- pF 100 7 5 Ciss 3 2 Coss 3 2 Coss Crss Crss 10 7 5 0 3 6 9 12 15 IT10909 10 7 0 --2 --4 --6 --8 --10 --12 IT09202 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 VGS -- Qg VDS=10V ID=1.2A Drain-to-Source Voltage, VDS -- V --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V VDS= --6.0V ID= --0.9A 1.2 IT10910 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC 10 7 5 3 2 Total Gate Charge, Qg -- nC 7 5 3 2 IT09203 ASO IDP=4.8A [Nch] ASO IDP= --3.6A [Pch] Drain Current, ID -- A Drain Current, ID -- A ID=1.2A 10 m PW10s 10 0 s PW10s 1m s 100s s s 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 1m D C 10 op er at io s 0m s --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --0.9A 10 m 10 D C op er at io 0m s n n Operation in this area is limited by RDS(on). (T a= a= (T 25 C ) Operation in this area is limited by RDS(on). 25 ) C Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 IT10911 Drain-to-Source Voltage, VDS -- V PD -- Ta [Nch, Pch] --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 --0.1 23 5 7 --1.0 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --10 23 IT09204 0.8 Allowable Power Dissipation, PD -- W 0.7 0.65 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 M ou nt ed on ac er am ic bo ar d( 90 0m m2 0 .8 m m )1 un it Ambient Temperature, Ta -- C IT10912 No. A0380-5/6 SCH2615 Note on usage : Since the SCH2615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0380-6/6 |
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