 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-16 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS 2.5 max Grenzwerte (TA = 25C) MMBT5400 120 V 130 V 5V 250 mW 1) 600 mA -55...+150C -55...+150C MMBT5401 150 V 160 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - Max. - 180 - - 240 - 0.2 V 0.5 V 1.0 V 1.0 V - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA MMBT5400 hFE hFE hFE hFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat 30 40 40 50 60 50 - - - - MMBT5401 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBT5400 / MMBT5401 Characteristics (Tj = 25C) Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 100 V, (E open) - VCB = 120 V, (E open) - VCB = 100 V, Tj = 100C, (E open) - VCB = 120 V, Tj = 100C, (E open) - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - IC = 10 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RS = 10 , f = 1 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung MMBT5400 MMBT5401 F F RthA - - - - < 420 K/W 1) MMBT5550 / MMBT5551 MMBT5400 = 2L MMBT5401 = 2Lx - 8 dB CCBO - - 6 pF fT 100 MHz - 300 MHz MMBT5400 MMBT5401 MMBT5400 MMBT5401 - ICBO - ICBO - ICBO - ICBO - IEBO - - - - - - - - - -50 nA 50 nA 50 A 50 A 50 nA Kennwerte (Tj = 25C) Emitter-Base-cutoff current - Emitter-Basis-Reststrom 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
Price & Availability of MMBT5400
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |