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Ordering number:EN4697
FP201
NPN Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp, Differential Amp Applications
Features
* Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. * The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package. * Excellent in thermal equilibrium and pair capability. Electrical Connection
1:Base (NPN TR) 2:Collector (NPN TR) 3:Emitter Common 4:Collector (NPN TR) 5:Base (NPN TR) 6:Collector (NPN TR) 7:Collector (NPN TR) (Top view)
Package Dimensions
unit:mm 2107A
[FP201]
1:Base (NPN TR) 2:Collector (NPN TR) 3:Emitter Common 4:Collector (NPN TR) 5:Base (NPN TR) 6:Collector (NPN TR) 7:Collector (NPN TR) SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Conditions Ratings 30 20 3 300 600 Unit V V V mA mA W W
Mounted on ceramic board (250mm2x0.8mm) 1unit Mounted on ceramic board (250mm2x0.8mm)
0.75 1.0 150 -55 to +150
C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance C-E Saturation Voltage B-E Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 VCB=20V, IE=0 VEB=2V, IC=0 VCE=5V, IC=50mA 60 20 0.7 0.95 3.0 2.2 2.9 2.6 0.2 0.9 0.5 1.2 15 mV GHz pF pF V V Conditons Ratings min typ max 1.0 5.0 200 Unit A A
VCE=5V, IC=300mA hFE1(smal- VCE=5V, IC=50mA l/large) VBE(large- VCE=5V, IC=100mA small fT Cob Cre VCE(sat) VBE(sat) VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz IC=200mA, IB=20mA IC=200mA, IB=20mA
Note:The specifications shown above are for each individual transistor. However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors. Marking:201
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3
FP201
No.4697-2/3
FP201
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.4697-3/3

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