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| AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200m - 10A Description GD Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 20 -10 -8.6 -48 36.7 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 110 Unit /W /W Data and specifications subject to change without notice 200505031 AP3403GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.1 Max. Units 200 400 -3 -1 -25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A 2 3.8 1.7 1.6 6.7 20.8 14.9 4.4 217 103 31 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-6A RG=2,VGS=-10V RD=2.5 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.25A, VGS=0V IS=-6A, VGS=0V, dI/dt=-100A/s Min. - Typ. 35 63 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP3403GH/J 12 10 T C =25 C 10 o -ID , Drain Current (A) 8 -5.0V 6 -ID , Drain Current (A) -10V -8.0V -6.0V T C =150 o C 8 -10V -8.0V -6.0V 6 -5.0V 4 4 V G =-4.0V 2 V G =-4.0V 2 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 250 1.8 I D =-10A T c =25 Normalized R DS(ON) 200 1.6 I D =-10A V G = -10V 1.4 RDS(ON) (m ) 1.2 150 1 0.8 100 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100 10 2 -IS(A) 1 T j =150 o C T j =25 o C -VGS(th) (V) 1 0 1.3 1.5 -50 0 0 0.1 0.3 0.5 0.7 0.9 1.1 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3403GH/J 14 f=1.0MHz 1000 12 -VGS , Gate to Source Voltage (V) I D =-10A V DS =-24V Ciss 10 8 C (pF) 100 Coss 6 4 Crss 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) DUTY=0.5 1ms -ID (A) 10ms 10 0.2 0.1 0.1 0.05 PDM t 0.02 0.01 Single Pulse 100ms T c =25 o C Single Pulse 1 T Duty factor = t/T Peak T j = PDM x Rthjc + TC DC 10 100 0.01 0.00001 1 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS D TO THE OSCILLOSCOPE D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS 0.5 x RATED VDS G S VGS RG G S -10 V VGS -1~-3mA IG ID Fig11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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