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MITSUBISHI SEMICONDUCTOR
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 COM COMMON

FEATURES High breakdown voltage (BVCEO 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta = -20 to +75C)
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM OUTPUT
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
INPUT
20K
20K 2K GND The seven circuits share the COM and GND.
FUNCTION The M54530P and M54530FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54530FP is enclosed in a molded small flat package, enabling space-saving design.
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Ratings -0.5 ~ +40 400 -0.5 ~ +40 400
Unit V mA V mA V W C C
Aug. 1999
Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
40 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125
MITSUBISHI SEMICONDUCTOR
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Limits min 0 typ -- -- -- -- -- -- max 40 400
Unit V
IC
VIH VIL
Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more thn 30% FP : no more than 25% IC 400mA IC 200mA
0 0 8 5 0
mA 200 35 0.5 V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II VF IR hFE Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Test conditions ICEO = 100A
Limits min 40 -- -- -- -- -- -- 1000 typ+ -- 1.3 1.0 0.85 2.0 1.5 -- 3500 max -- 2.4 1.6 1.8 3.8 2.4 100 --
Unit V V mA V A --
Collector-emitter breakdown voltage
VI = 8V, IC = 400mA Collector-emitter saturation voltage VI = 5V, IC = 200mA Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor VI = 17V VI = 35V IF = 400mA VR = 40V VCE = 4V, IC = 300mA, Ta = 25C
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 35 760 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Measured device OPEN PG 50 CL OUTPUT VO
TIMING DIAGRAM
50%
RL
50%
INPUT
OUTPUT 50% 50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 400
VI = 5V
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
M54530P
Collector current Ic (mA)
300
1.0
M54530FP
200
0.5
100
Ta = 75C
Ta = 25C Ta = -20C
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54530P) 500 500
Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54530P)
Collector current Ic (mA)
Collector current Ic (mA)
400

400
300
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
100
100

0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) Duty-Cycle-Collector Characteristics (M54530FP) 500 500
Duty cycle (%) Duty-Cycle-Collector Characteristics (M54530FP)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
300
100

200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.
100

*Ta = 75C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor Collector Current Characteristics 104
7 VCE = 4V Ta = 75C
Grounded Emitter Transfer Characteristics 400
VCE = 4V
DC amplification factor hFE
5 3 2
Collector current Ic (mA)
Ta = 25C Ta = -20C
300
103
7 5 3 2
200
Ta = 75C
100
Ta = 25C Ta = -20C
102 1 10
2
3
5 7 102
2
3
5 7 103
0
0
1
2
3
4
Collector current Ic (mA)
Input voltage VI (V)
Input Characteristics 2.0
Forward bias current IF (mA)
Clamping Diode Characteristics 400
Input current II (mA)
1.5
Ta = -20C
300
1.0
Ta = 25C Ta = 75C
200
0.5
100
Ta = 75C
Ta = 25C Ta = -20C
0
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Aug. 1999

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