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QSZ1
Transistors
General purpose transistor
QSZ1
A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package.
Applications DC / DC converter Motor driver
External dimensions (Unit : mm)
QSZ1
2.8 1.6
Features 1) Low VCE(sat) 2) Small package
0.16
(3)
(4)
0.30.6
Structure Silicon epitaxial planar transistor
ROHM : TSMT5
Abbreviated symbol : Z01
Equivalent circuit
(5) (4)
Tr1
Tr2
(1)
(2)
(3)
Packaging specifications
Type
Package Marking Code Basic ordering unit(pieces)
QSZ1 TSMT5 Z01 TR 3000
00.1
Each lead has same dimensions
0.85
0.7
0.95 0.95 1.9 2.9
0.4
(2)
(1)
(5)
1/4
QSZ1
Transistors
Absolute maximum ratings (Ta=25C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Limits -15 -12 -6 -2 -4 500 1.25 0.9 150 -55 to +150 Unit V V V A A 1 mW/Total 2 W/Total 3 W/Element 3 C C
Collector power dissipation
Junction temperature Tj Storage temperature Tstg 1 Single pulse Pw=1ms. 2 Each terminal mounted on a recommended land. 3 Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate.
Tr2
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current Power dissipation
Symbol VCBO VCEO VEBO IC ICP PC
Junction temperature Tj Range of storage temperature Tstg 1 Single pulse Pw=1ms. 2 Each terminal mounted on a recommended land. 3 Mounted on a 25mm 25mm t0.8mm ceramic substrate.
Limits 15 12 6 2 4 500 1.25 0.9 150 -55 to +150
Unit V V V A A 1 mW/Total 2 W/Total 3 W/Element 3 C C
Electrical characteristics (Ta=25C) Tr1
Parameter Collector-base breakdown voltage Collector-emitter breakdown viltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collerctor-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -15 -12 -6 - - - 270 - - Typ. - - - - - -120 - 360 15 Max. - - - -100 -100 -180 680 - - Unit V V V nA nA mV - MHz pF IC= -10A IC= -1mA IE= -10A VCB= -15V VEB= -6V IC= -1mA, IB= -50mA VCE= -2V, IC= -200mA Conditions
+
+
VCE= -2V, IE=200mA, f=100MHz VCB= -10V, IE=0mA, f=1MHz
Tr2
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance
Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 15 12 6 - - - 270 - -
Typ. - - - - - 90 - 360 20
Max. - - - 100 100 180 680 - -
Unit V V V nA nA mV - MHz pF
Conditions IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC=1A, IB=50mA VCE=2V, IC=200mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz
2/4
QSZ1
Transistors
Electrical characteristic curves Tr1
BASE SATURATION VOLTAGE : VBE(sat) : (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Ta=100C
VCE= -2V PULSED
IC/IB=20 PULSED
COLLECTOR SATURATION VOLTAGE : VCE(sat): (V)
1000
10
1
Ta=25C PULSED
DC CURRENT GAIN : hFE
25C
1
-40C 25C Ta=100C
Ta=100C 25C -40C
0.1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.01
-40C
0.1
0.01
100 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current
Fig.3 Collector-emitter saturation voltage vs. collector current
10
1
TRANSITION FREQUENCY : fT : (MHz)
VCE= -2V PULSED
1000
Ta=25C VCE= -2V f=100MHz
1000
IC=20 IB1=-20IB2 Ta=25C tstg f=100MHz
COLLECTOR CURRENT IC : (A)
Ta=100C 25C -40C
0.1
SWITCHING TIME : (ns)
100
tf
tr
100
tdon
10
0.01
0.001 0 0.5 1
10 0.001
0.01
0.1
1
10
1 0.001
0.01
0.1
1
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation characteristics
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Switching time
EMITTER INPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob(pF)
1000
Ta=25C IE=0mA f=1MHz
cib
100
cob
10 0.1
1
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/4
QSZ1
Transistors
Tr2
COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V)
Ta=100C Ta=25C Ta= -40C
VCE=2V Pulsed
IC/IB=20/1 VCE=2V Pulsed 0.1
Ta=100C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
1
1
Ta=25C
Ta=25C
Pulsed
DC CURRENT GAIN : hFE
0.1
100
Ta= -40C
IC/IB=50/1
0.01
0.01
IC/IB=20/1 IC/IB=10/1
10 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.8 DC current gain vs. collector current
Fig.9 Base-emitter saturation voltage vs. collector current
Fig.10 Collector-emitter saturation voltage vs. collector current
10
1000
TRANSITION FREQUENCY : fT (MHz)
VCE=2V Pulsed
1000
COLLECTOR CURRENT : IC (A)
1
SWITCHING TIME : (ns)
Ta=25C VCE=2V f=100MHz
Ta=25C
VCE=5V f=100MHz 100
tstg
Ta=100C
Ta=25C
0.1
Ta=-40C
100
10
tdon tf
0.01
0.001
0
0.5
1
1.5
10 0.001
0.01
0.1
1
10
1 0.01
tr
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.11 Grounded emitter propagation characteristics
Fig.12 Gain bandwidth product vs. emitter current
Fig.13 Switching time
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
Ta=25C IC=0A f=1MHz
Cib
100
10
Cob
1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.14 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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