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| SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TO FZT493 PARTMARKING DETAIL - FZT593 7 FZT593 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Saturation Voltages ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE 100 100 100 50 50 5 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -120 -100 -5 -2 -1 -200 2 -55 to +150 UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). MIN. MAX. UNIT CONDITIONS. -120 -100 -5 -100 -100 -100 -0.2 -0.3 -1.1 -1.0 V V V nA nA nA V V V V IC=-100A IC=-10mA* IE=-100A VCB=-100V VEB=-4V VCES=-100V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* IC=-500mA,IB=-50mA* IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* MHz pF IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz 300 Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical Characteristics graphs see FMMT593 datasheet 3 - 196 |
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