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APT20M11JVFR
200V 175A
S G D
0.011
S
POWER MOS V (R)
FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP(R)
2 T-
27
* Fast Recovery Body Diode * Lower Leakage * Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested
FREDFET
D G S
* Popular SOT-227 Package
All Ratings: TC = 25C unless otherwise specified.
APT20M11JVFR UNIT Volts Amps
200 175 700 30 40 700 5.6 -55 to 150 300 175 50
4 1
Continuous Drain Current @ T C = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
200 175 0.011 250 1000 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5603 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (V GS = 30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS , ID = 5mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-802 8 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-036 4 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M11JVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF
18000 4100 1350 690 95 290 20 40 75 10
21600 5740 2025 1035 140 435 40 80 115 20
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
175 700 1.3 5
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
150 250 0.9 2.5 12 20
250 500
THERMAL /PACKAGE CHARACTERISTICS
Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations.
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 235H, R
j
MIN
TYP
MAX
UNIT C/W Volts
0.18 40 2500 13
G
lb*in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt
= 25, Peak IL = 175A
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 , THERMAL IMPEDANCE (C/W) 0.1 0.05 D=0.5 0.2 0.1 0.01 0.005 0.05 0.02 0.01 SINGLE PULSE 0.001 0.0005 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5603 Rev B
Z
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT20M11JVFR
360 I , DRAIN CURRENT (AMPERES) D 300 240 6V VGS =7V, 8V, 9V, 10V & 15V 360 6.5V I , DRAIN CURRENT (AMPERES) D 300 240 VGS=15V 10V 9V 6V 8V 7V 6.5V
180
5.5V
180
5.5V
120
5V
120 60
5V 4.5V
60
4.5V
4V 0 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS (ON), DRAIN-TO-SOURCE ON RESISTANCE 360 I , DRAIN CURRENT (AMPERES) D 300 240 T J = -55C T J = +25C TJ = +125C
VDS> I D (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ < 0.5 % DUTY CYCLE
4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 1.15
NORMALIZED TO V GS = 10V @ 0.5 ID [Cont.]
1.10
V GS=10V
1.05
180 120 T J = +125C T J = +25C TJ = -55C
1.00 0.95
VGS =20V
60
0.90
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 200 I , DRAIN CURRENT (AMPERES) D
R
0
DS
0.85
0
100 200 300 400 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) BV 25
DSS
ID = 0.5 I D [Cont.] V = 10V
1.15
1.10
150
1.05
100
1.00
50
0.95
50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.0
1.1 1.0 0.9 0.8 0.7 050-5603 Rev B
1.5
1.0
0.5
DS
0.0 -50
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
0.6
-50
APT20M11JVFR
1,000 ID , DRAIN CURRENT (AMPERES) 500
OPERATION HERE LIMITED BY RDS (ON)
50,000 10S 100S Ciss C, CAPACITANCE (pF)
100 50 1mS
10,000 5,000
Coss
10mS 10 5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
Crss
1,000 500
1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20
ID = 0.5 ID [Cont.]
1
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 400
16
VDS =40V VDS =100V
100 50
TJ =+150C
T J =+25C
12 VDS =160V 8
10 5
4
200 400 600 800 1000 1200 1400 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
V 050-5603 Rev B
Isolation
Gate
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL Recognized" File No. E145592
5,262,336 5,528,058

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