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TST0950
SiGe - Low Noise Amplifier (900 MHz)
Description
The TST0950 is a low-noise amplifier (LNA) in SiGe technology. This LNA offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery operation time. In low-gain mode, the output drive capability is not reduced, resulting in improved intermodulation performance. The nominal gain is very precise and has max. 1.0 dB gain variation over full temperature range and supply-voltage range. Electrostatic sensitive device. Observe precautions for handling.
Features
D Input frequency 925 to 960 MHz D Low noise figure at high gain mode (typ. 2.2 dB) D Precise gain (19 dB, 1.0 dB) D Low- / high gain mode D High gain flatness (0.3 dB max.) D Power-down function D High reverse isolation (min. -40 dB) D Small package (TSSO8)
Block Diagram
VCC 3 VGain 7 Pon 4 Bandgap
RFin
1
5
RFout
2 GND
6 GND
Figure 1. Block diagram
8 GND
Ordering Information
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Rev. A6, 25-Apr-00 1 (6)
Extended Type Number TST0950B-MFPG3
Package TSSO8
Remarks Taped and reeled
TST0950
Pin Description
RFin GND VCC Pon 1 8 GND
2
7
VGain GND RFout
TST0950
3 6
4
Figure 2. Pinning
5
Functional Description
The TST0950 is a very precise amplifer, especially designed for GSM telephone applications. The circuit consists of three stages. By attenuating the output signal of the first stage, the complete amplifier gain is reduced and the intermodulation behavior is improved.
Absolute Maximum Ratings
All voltages are referred to GND (Pins 2, 6 and 8)
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Supply voltage Junction temperature Storage temperature Input power Power-down input Gain switching input
Parameters Pin 3
Pin 1 Pin 4 Pin 7
Solder Reflow Profile (SMD Packages)
Parameters Maximum heating rate Peak temperature in preheat zone Duration of time above melting point of solder Peak reflow temperature Maximum cooling rate
Wave Soldering (Through-Hole Packages)
Parameters Maximum lead temperature (5 s)
2 (6)
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RF input Ground Supply voltage Power-down input RF output Ground Gain switching input Ground Symbol VCC Tj Tstg RFin Pon VGain Min. 2.7 -40 -40 - 0 0 Max. 3.3 +125 +150 -10 VCC VCC Unit V C C dBm V V Symbol TD TPH tMP TPeak TPeak Value 1 to 3 100 to 140 Min. 10 / Max. 130 220 to 225 2 to 4 Unit C/s C s C C/s Symbol TD Value 260 Unit C Rev. A6, 25-Apr-00
Pin 1 2 3 4 5 6 7 8
Symbol RFin GND VCC Pon RFout GND VGain GND
Function
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Note for biasing: Apply first VCC, then Pon and VGain (see absolute maximum ratings) All voltages are referred to GND (Pins 2, 6 and 8)
*)
Rev. A6, 25-Apr-00
Test conditions: VCC = + 2.8 V, Tamb = +25C, unless otherwise specified
Electrical Characteristics
Operation Range
Input 1 dB compression point in low-gain mode in high-gain mode Input intercept point 3rd order in low-gain mode in high-gain mode Reverse isolation in low-gain mode in high-gain mode Control function Control inputs threshold high level low level Leakage current on control inputs low level
Parameters Power supply Supply voltage Current consumption active mode power-down mode IF input Input impedance *) Output impedance *) Frequency band Nominal gain Gain attenuation related to nominal gain Gain flatness Noise figure in low-gain mode in high-gain mode Input VSWR *) in low-gain mode in high-gain mode Output VSWR *)
Parameters Supply voltage Ambient temperature Input frequency
with external matching (see application circuit) LNA active
LNA active PON = `1' Pin 5 LNA inactive PON = `0' Pin 5
Test Conditions / Pins
Pins 4 and 7
Pins 4 and 7
Pin 1 to 5 Pin 1 to 5
Pin 1 to 5 Pin 1 to 5
Pin 5 to 1
Pin 1 to 5
Pin 1 to 5
Pin 1
Pin 1 Pin 5
Pin 3
Symbol VCC Tamb IFin
Symbol
VSWR
VSWR
VSWR VSWR
VTH VTH Il
VCC
Zi Zo Fin G DG
NF NF
Ia Ipd
Min. 2.7 -20 925
0.97
Min.
-0.3
-7 -12
-16 -21
925 18 15
2.7
40 38
VCC
Typ. 2.8
Typ.
11 2.2
2.8
19
50 50
10 50
TST0950
Max. 2.9 +70 960
0.03
Max.
+0.3
100
960 20 17
12 200
3:1
2:1
2:1 2:1
20 2.5
2.9
VCC
Unit V C MHz
W W MHz dB dB
dBm dBm
dBm dBm
Unit
mA A
V V A
dB dB
dB dB
dB
V
3 (6)
TST0950
Power Down Logic
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Gain Control Logic
Level
Pon `0' `1'
Power Status Power OFF Power ON
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Test Circuit
VGain C8 39p 8 7 6 5 RFout C7 3.9p L2 6.8n 220 C6 33p C9 1n VCC
Gain Level
VGain `0' `1'
Gain Minimum gain Maximum gain
TST0950
1 C1 33p L1 6.8nH C 2 5.6p RFin 2 C3 39p C4 1n VCC Pon 3 4 C5 39p
Figure 3. Test circuit
4 (6)
Rev. A6, 25-Apr-00
TST0950
Package Information
Package TSSO8
Dimensions in mm
3.1 2.9 5.0 4.8
0.9 0.8 0.38 0.25 0.65 1.95 8 5 0.15 0.05
0.20 0.13 3.1 2.9
technical drawings according to DIN specifications
1
4
Rev. A6, 25-Apr-00
5 (6)
TST0950
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
1.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
6 (6)
Rev. A6, 25-Apr-00

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