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Features
* * * * * * * *
High Power Added Efficiency 1xRTT Compatible Industry Compatible, Digital Quiescent Current State Control Analog Continuous Bias Capability with Excellent Linearity CMOS-compatible State Logic Inputs Excellent ACP and ALT Excellent RX Band Noise Performance Low Leakage Current
Benefits
* * * *
Very Small 4 mm x 4 mm Package with 10 Pins Internal Matched Input and Output Few External Components Fully ESD Protected
3-V CDMA Power Amplifier Module 4 mm x 4 mm for PCS Band T0377 Preliminary (Summary)
Applications
* PCS Band CDMA IS-95/98 Based Mobile Phones * Single-mode and Tri-mode CDMA Phones
Description
The T0377 is a 4 mm 4 mm 3-V CDMA PCS band power amplifier module designed for use in mobile phones. Its extremely small 4 mm 4 mm package makes it ideal for today's very small data enable phones. The module supports the IS-95 and IS-98 standards and is also 1xRTT compliant. The T0377 provides excellent RF performance with low current consumption resulting in longer talk times in portable applications. The heart of the module is a three-stage power amplifier manufactured in Atmel's SiGe technology. The T0377 provides the capability to be operated digitally (one or two bias state) or continuous quiescent current mode. In two-state quiescent current mode operation, the T0377 is controlled by the baseband processor using a CMOS-compatible ICQ control voltage. Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. The module is 50-W matched on the input and output, allowing the device to be used with minimal external circuitry.
Rev. 4542AS-CDMA-09/02
1
Figure 1. Block Diagram
VCC1
GND
VCC2
1 2
10 8
RFIN
Match
Match
RFOUT
Bias & Control
5
VREF
4
VCTRL
Pin Configuration
Figure 2. Pinning
VCC1 RFIN GND VCTRL VREF
1 2 3 4 5 10 9 8 7 6
VCC2 GND RFOUT GND GND
Pin Description
Pin 1 2 3 4 5 6 7 8 9 10 Symbol VCC1 RFIN GND VCTRL VREF GND GND RFOUT GND VCC2 Paddle Function Collector supply for input stage RF input, the RF circuit is DC-grounded internally, 50-W RF impedance Ground recommended CMOS-compatible logic level used to set bias level Regulated supply for setting bias, reference voltage input, VRef to set to 0VDC to power off the T0377 Ground recommended Ground recommended RF output, the RF circuit is DC-blocked internally, 50-W RF impedance Ground recommended Collector supply for output stage Device ground and heat sink, requires good thermal path
2
T0377
4542AS-CDMA-09/02
T0377
Absolute Maximum Ratings
Parameters Supply voltages, no RF applied Supply voltages, RF applied Bias reference voltages and bias control voltages (Pins 3, 4, and 8 respectively) Power dissipation Case temperature, survival Storage temperature DC-grounded RF input DC-blocked RF output Note: Symbol VCC1, VCC2 VCC1, VCC2 VREF, VCTRL PDISS TC Tstg RFIN RFOUT Value -0.5 to +6.0 -0.5 to +5.0 -0.5 to +5.0 2.5 -40 to +100 -40 to +150 0 to 0 -20 to +20 Unit VDC VDC VDC W C C VDC VDC
The part may not survive all maximum ratings applied simultaneously.
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value TBD Unit K/W
Electrical Characteristics
Test conditions: VCC1, CC2 = 3.4 VDC, VREF = 2.9 VDC, VCTRL = 0.5 VDC, RF = 1880 MHz, TC = 25C, Pout = 28 dBm, Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No. Parameters Frequency Output power Large signal gain Pout = 28 dBm, VCTRL = low Pout = 16 dBm, VCTRL = high Gain variation versus temperature Quiescent current (high-gain mode) Quiescent current (low-gain mode) Current consumption Output power (low) -30C to +85C VCTRL = low VCTRL = high Pout = 28 dBm ACPR = -50 dBc, IS-95/98 standard, VCTRL = high Pout = 28 dBm VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low 8 Test Conditions Pin 2, 8 8 2, 8 2, 8 2, 8 1, 5, 10 1, 5, 10 1, 5, 10 8 ICQ-hi ICQ-low Icc Pout PAE Symbol fo Pout Ghigh Glow Min. 1850 Typ. 1880 28 29 27 2.5 129 80 607 Max. 1910 Unit MHz dBm dB dB dB mA mA mA Type* A A A A C A A A
16
dBm
B
Power added efficiency Adjacent channel power
31
%
A
ACP
-51
dBc
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
3
4542AS-CDMA-09/02
Electrical Characteristics (Continued)
Test conditions: VCC1, CC2 = 3.4 VDC, VREF = 2.9 VDC, VCTRL = 0.5 VDC, RF = 1880 MHz, TC = 25C, Pout = 28 dBm, Minimum/maximum limits are at +25C ambient temperature, unless otherwise specified
No. Parameters Alternate channel power Noise power in Rx band RF input return loss Second harmonic Test Conditions Pout = 28 dBm, IS-95/98 standard, VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low Pout = 28 dBm, IS-95/98 standard, VCTRL = low For one or two bias state operation VCTRL = low VCTRL = high Leakage current Logic current Control voltage Ruggedness VCTRL = high; VREF = 0 VDC At VCTRL High Low No damage, Pout = 28 dBm, IS-95/98 standard, VCC1, CC2 = high No oscillations, Pout = 28 dBm, IS-95/98 standard, VCC1, CC2 = high Pin 8 Symbol ALT Min. Typ. -62 Max. Unit dBc Type* A
8 2 8 S11 2f0
-88 11.5 -35
dBm/ 30 kHz dB dBc
C C A
Third harmonic
8 1, 10 5 5 5 1, 10 4 4
3f0 VCC VREF IB-high IB-low 3.2 2.8
-45 3.4 2.9 12 4 10 4.2 3.0
dBc VDC VDC mA mA A 100 A VDC VDC
A D D A A A A D
Supply voltage Reference voltage Reference current
ICTRL VCTRL 1.7 0 2.0 0.25
3.5 0.5
8
10:1
C
Stability
8
10:1
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T0377
4542AS-CDMA-09/02
T0377
Ordering Information
Extended Type Number T0377 Package 4 mm 4 mm module package Remarks
Package Information
PIN 1 2 3 4 5 TOP VIEW
10 9 8 7 6
MOLD SUBSTRATE
SIDE VIEW
5 4 3 2 1
6 7 8 9 10
BOTTOM VIEW
5
4542AS-CDMA-09/02
Designation A A1 A2 D E J M P T S R Q e e1
Description Overall height Substrate thickness Mold thickness Package length Package width Terminal solder mask opening length (for all terminals) Distance between metal pad and solder mask Distance between metal pad and package edge GND solder mask opening length GND solder mask opening width Distance between GND solder mask opening and package edge Distance between GND solder mask opening and package edge Terminal pitch for terminals 1-10, 2-9, 3-8, 4-7 and 5-6 Terminal pitch for terminals 1-2-3-4-5 and 6-7-8-9-10
Dimensions 1.06 0.09 mm 0.38 0.05 mm 0.68 0.05 mm 4.0 0.1 mm 4.0 0.1 mm 0.575 0.075 mm 0.075 0.05 mm 0.10 0.025 mm 2.00 0.5 mm 3.80 0.5 mm 0.10 0.01 mm 1.00 0.01 mm 3.400 mm 0.850 mm
For full data sheet, please contact MarketingNews@hno.atmel.com
6
T0377
4542AS-CDMA-09/02
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(c) Atmel Corporation 2002. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems.
Atmel (R) is the registered trademark of Atmel. CDMA345 TM is the registered trademark of Atmel and Triquint. Other terms and product names may be the trademarks of others. Printed on recycled paper.
4542AS-CDMA-09/02 xM

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