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| Preliminary data SPD08N10 SPU08N10 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V 100 V ID 8.4 A 8.4 A RDS(on) 0.3 0.3 Package Ordering Code SPD08N10 SPU08N10 P-TO252 P-TO251 Q67000-. . . - . . Q67000-. . . - . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C ID A 8.4 Pulsed drain current TC = 25 C IDpuls 33.6 EAS Avalanche energy, single pulse ID = 8.4 A, VDD = 25 V, RGS = 25 L = 850 H, Tj = 25 C mJ 30 VGS Ptot Gate source voltage Power dissipation TC = 25 C 20 40 V W Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 150 -55 ... + 150 C 3.1 50 100 55 / 150 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Semiconductor Group 1 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 100 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 100 V, V GS = 0 V, Tj = 25 C V DS = 100 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 8.4 A 0.25 0.3 Semiconductor Group 2 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 8.4 A gfs S 2 4.5 pF 340 425 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 80 100 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 30 40 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tr 13 20 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 td(off) 40 60 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tf 50 75 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 - 35 55 Semiconductor Group 3 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 8.4 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 33.6 V Inverse diode forward voltage V GS = 0 V, IF = 16.8 A trr 1.2 1.6 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 90 135 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.35 0.55 Semiconductor Group 4 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 9 A ID 7 6 5 4 3 2 1 0 45 W Ptot 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A DS t = 15.0s p K/W ZthJC ID DS (o n) /I D V 10 1 R = 100 s 10 0 1 ms 10 -1 D = 0.50 10 ms 0.20 0.10 10 -2 0.05 0.02 single pulse 0.01 10 0 DC 10 -1 0 10 10 1 V 10 2 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 5 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 19 A 16 ID 14 g Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.9 a b c d e f Ptot = 40W l kj i VGS [V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 ha b c d e RDS (on) 0.7 0.6 0.5 0.4 g 12 10 8 6 4 2 0 0 2 4 6 8 a e ff g h i j 0.3 0.2 j h i dk l c b 0.1 0.0 V 11 0 VGS [V] = a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 2 4 6 8 10 12 14 A 17 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 30 A 26 I D 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 8.4 A, VGS = 10 V 0.9 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 98% RDS (on) 0.7 0.6 0.5 VGS(th) 3.6 3.2 2.8 2.4 2% typ 0.4 0.3 0.2 98% 2.0 typ 1.6 1.2 0.8 0.1 0.0 -60 -20 20 60 100 C 160 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 A C pF Ciss IF 10 1 10 2 Coss 10 0 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Avalanche energy EAS = f (Tj) parameter:ID=8.4A,VDD =25 V RGS =25 , L = 850H 35 Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V mJ EAS 116 114 V(BR)DSS 25 112 110 20 108 106 104 15 102 100 10 98 96 5 94 92 90 40 60 80 100 120 C Tj 0 20 160 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 23/Jan/1998 Preliminary data SPD08N10 SPU08N10 Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 23/Jan/1998 |
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