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| MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-2HB * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 112 930.25 25 25 Dimensions in mm 21.5 17 6 B1 E1 26 6 5 14 8 5 4-6.5 3 - M6 1 17 8 17 8 17 Tab#110, t=0.5 B2X 2.8 8.5Min. 6 700.25 89 C2E1 E2 C1 E2 B2 15 15 B1X MAX 1 LABEL 21 (7) B2X 6 B2 E2 C1 C2E1 E2 B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 200 200 1560 10 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V, Collector open IC=200A, IB=270mA IC=-200A (diode forward voltage) IC=200A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=200A IB1=0.4A, -IB2=4.0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 200 4.0 4.0 1.8 -- 2.5 15 3.0 0.08 0.35 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=10V COLLECTOR CURRENT IC (A) Tj=25C 400 IB=4.0A IB=2.0A IB=8.0A 300 200 IB=1.0A IB=0.4A DC CURRENT GAIN hFE VCE=4V 100 Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 3.0 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=4.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 VBE(sat) VBE(sat) SATURATION VOLTAGE IB=270mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 3.4 3.8 4.2 4.6 5.0 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 IC=300A 3 IC=200A 2 IC=100A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=0.4A 3 -IB2=4.0A 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 1 ton, ts, tf (s) ts tf SWITCHING TIME ton 1 Tj=25C Tj=125C 0 10 -2 2 3 5 710 -1 2 3 5 7 10 0 2 3 5 7 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 3 7 5 3 2 10 2 7 5 3 2 REVERSE BIAS SAFE OPERATING AREA 400 ts COLLECTOR CURRENT IC (A) ts, tf (s) IB2=-4A 300 IB2=-8A 200 SWITCHING TIME tf 10 1 VCC=600V 7 IB1=0.4A 5 IC=200A 3 Tj=25C 2 Tj=125C 10 0 -1 10 2 3 4 5 7 10 0 100 Tj=125C 2 3 45 7 10 1 0 0 400 800 1200 1600 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 DC DERATING FACTOR OF F. B. S. O. A. 100 90 SECOND BREAKDOWN AREA 50s 1ms 100s COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 200s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.10 0.08 Zth (j-c) (C/ W) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.06 0.04 0.02 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 10 1 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=0.4A 3 -IB2=4A 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 Tj=25C 3 2 Tj=125C 10 -1 2 3 4 5 7 10 3 1600 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 7 5 3 2 10 0 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE PART) 10 0 2 3 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 trr (s) 1200 Irr (A), Qrr (c) 10 2 7 5 3 2 |
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