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| BCX 19, BCX 20 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BCX 19 45 V 50 V 5V 250 mW 1) 500 mA 1A 200 mA 150/C - 65...+ 150/C BCX 20 25 V 30 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 500 mA, IB = 50 mA IEB0 VCEsat - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 5 :A 100 nA 620 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 54 01.11.2003 1 General Purpose Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 300 mA VCE = 1 V, IC = 500 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 1 V, IC = 500 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCX 19 = U1 fT CCB0 100 MHz - RthA VBEon - hFE hFE hFE 100 70 40 BCX 19 , BCX 20 Kennwerte (Tj = 25/C) Typ. - - - - - 5 pF Max. 600 - - 1.2 V - - 420 K/W 2) BCX 17, BCX 18 BCX 20 = U2 Collector-Base Capacitance - Kollektor-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 55 |
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