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| RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9520. Features * 2A, 50V and 60V * rDS(ON) = 0.950 * Design Optimized for 5V Gate Drives * Can be Driven from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics Ordering Information PART NUMBER RFL2N06L PACKAGE TO-205AF BRAND RFL2N06L * High Input Impedance * Majority Carrier Device NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFL2N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL2N06L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 50 60 2 10 10 8.33 0.0667 -55 to 150 300 UNITS V V A A V W W/oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC MIN 60 1 TYP VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) 10 65 20 30 MAX 2 1 25 100 1.9 0.950 20 130 40 60 225 100 40 15 UNITS V V A A nA V ns ns ns ns pF pF pF oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 10V, VDS = 0V ID = 2A, VGS = 5V ID =2A, VGS = 5V, (Figures 6, 7) ID = 2A, VDD = 30V, RG = 6.25, RL = 30 VGS = 5V, (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 2 RFL2N06L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 Unless Otherwise Specified 2.5 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 PULSE DURATION = 80s TC = 25oC VGS = 10V VGS = 7.5V ID, DRAIN CURRENT (A) 1 VGS = 5V 4.5V 4V 3.5V 3V 2.5V 2V 7 0.10 0.01 1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 8 7 6 5 TC = -40oC 4 3 2 1 0 TC = -40oC 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) TC = 125oC TC = 125oC TC = 25oC VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 1.6 VGS = 5V 1.4 PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE ON RESISTANCE() 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 TC = 25oC TC = -40oC TC = 125oC FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFL2N06L Typical Performance Curves 2 VGS = 5V, ID = 2A Unless Otherwise Specified (Continued) 2 VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1 NORMALIZED GATE 1.5 THRESHOLD VOLTAGE 1.5 1 0.5 0.5 0 -50 0 50 100 150 200 0 -50 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 RL = 4 IG(REF) = 0.5mA VGS = 5V GATE SOURCE VOLTAGE VDD = BVDSS VDD = BVDSS 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 C, CAPACITANCE (pF) 300 45 6 200 CISS 30 4 15 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 0 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 100 COSS CRSS 2 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFL2N06L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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