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| BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 6.0 *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns 1 GATE 2 SOURCE 3 1 2 Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current (1) Power Dissipation (TA=25 C)(2) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDSS VGS ID IDM PD R JA TJ, Tstg Value 100 _ +20 170 680 225 556 Unit V V mA mA mW C/W C -55 to 150 Device Marking BSS123=SA WEITRON http://www.weitron.com.tw BSS123 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Threshold Voltage VDS=VGS , ID=1.0 mA Gate-body Leakage Current VGS= 20V, VDS=0V Zero Gate Voltage Drain Current VDS=0V, VGS=100V, Tj=25 C VDS=0V, VGS=100V, Tj=125 C Static Drain-to-Source On-Resistance VGS=10V, ID=0.1A Forward Trans Conductance VDS=25V, ID=100 mA V(BR)DSS VGS (th) IGSS IDSS 100 0.8 2.8 50 15 60 6.0 V V nA uA 8.0 5.0 rDS (on) g fs ms - - Dynamic Characteristics Input Capacitance VDS=25V, VGS=0, f=1.0 MHz Output Capacitance VDS=25V, VGS=0, f=1.0 MHz Transfer Capacitance VDG=25V, VGS=0, f=1.0 MHz Ciss Coss Crss - 20 9.0 4.0 PF Switching Characteristics(1) Turn-On Delay Time Turn-Off Delay Time (VCC =30V, IC =0.28A, VGS=10V, R GS =50 ) td(on) td(off ) - 20 40 nS Reverse Diode Diode Forward On-Voltage I D =0.34A, V GS =0V VSD - - 1.3 V Note: _ _ 1. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. _ _ 2. RF-5=1.0 0.75 0.062m. _ _ WEITRON http://www.weitron.com.tw BSS123 2.0 1.8 1.6 I D ,DRIAN CURRENT(A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 7V 6V 5V 4V 3V 9.0 10 Ta =25 C VGS=10V I D ,DRIAN CURRENT(A) 9V 8V 1.0 VGS=10V 0.8 -55 C 125 C 25 C 0.6 0.4 0.2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VDS ,DRAIN SOURCE VOLTAGE(V) VGS ,GATE SOURCE VOLTAGE(V) FIG.1 Ohmic Region FIG.2 Transfer Characteristics IDS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2.0 1.8 (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 + 20 + 60 + 100 + 140 VGS=10V ID =200mA VGS(th) ,THRESHOLD VOLTAGE (NORMZLIZED) 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 + 20 + 60 + 100 + 140 VDS=VGS ID =1.0mA T ,TEMPERATURE( C) T ,TEMPERATURE( C) FIG.3 Temperature Versus Static Drain-Source On-Resistance FIG.4 Temperature Versus Gate Threshold Voltage WEITRON http://www.weitron.com.tw |
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