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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES: * diffused emitter ballasting resistors for an optimum temperature profile; * gold sandwich metallization ensures excellent reliability. The transistor has a 14" capstan envelope with ceramic cap. All leads are isolated from the stud.
BLW98
QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-A Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. fvision MHz 860 860 VCE V 25 25 IC mA 850 850 Th C 70 25 dim(1) dB -60 -60 Po sync (1) W > typ. 3,5 4,4 > typ. Gp dB 6,5 7,0
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. (peak value); f > 1 MHz Total power dissipation at Th = 70 C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max. max. max. max. 2A 4A 21,5 W 200 C VCESM VCEO VEBO max. max. max. 50 V 27 V 3,5 V
BLW98
-65 to +150 C
handbook, halfpage
10
MGP717
handbook, halfpage
40
MGP718
IC (A)
(1)
Ptot (W) 30 Th = 70 C Tmb = 25 C
1
20
10-1
1
10
VCE (V)
102
10 0 50 Th (C) 100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75 C, Th = 70 C) From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 5,45 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
handbook, full pagewidth
6.5
MGP719
Rth j-h (K/W) 6 Th = 120 C 100 C 80 C 60 C 40 C 20 C Tj = 200 C 0 C 175 C 5.5 150 C 125 C 100 C 4.5 75 C
5
4 5 15 25 35 Ptot (W) 45
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example Nominal class-A operation (without r.f. signal): VCE = 25 V; IC = 850 mA; Th = 70 C. Fig.4 shows: Rth j-h Tj Typical device: Rth j-h Tj max. 6,05 K/W max. typ. typ. 200 C 5,35 K/W 183 C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 10 mA open base, IC = 25 mA Emitter-base breakdown voltage open collector, IE = 5 mA D.C. current gain(1) hFE IC = 850 mA; VCE = 25 V Collector-emitter saturation voltage(1) IC = 500 mA; IB = 100 mA Transition frequency at f = 500 MHz(2) -IE = 850 mA; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 25 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cre Ccs typ. typ. Cc typ. < fT typ. VCEsat typ. V(BR)EBO > > typ. V(BR)CES V(BR)CEO > >
BLW98
50 V 27 V 3,5 V 15 40
0,25 V 2,5 GHz 24 pF 30 pF
15 pF 1,2 pF
handbook, halfpage
10
MGP720
IC (A) 1
Th = 70 C
25 C
10-1
10-2 0.5
1
1.5
VBE (V)
2
Fig.5 Typical values; VCE = 25 V.
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
handbook, halfpage
60
MGP721
handbook, halfpage
100
MGP722
hFE VCE = 25 V 5V
Cc (pF) 75
40
50
20 25
typ
0 0 1 IC (A) 2
0 0 10 20 VCB (V) 30
Fig.6 Typical values; Tj = 25 C.
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
4
MGP723
fT (GHz) 3 typ
2
1
0 0 1 2 -IE (A) 3
Fig.8 VCB = 25 V; f = 500 MHz; Tj = 25 C.
August 1986
6
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION R.F. performance in u.h.f. class-A operation (linear power amplifier) fvision (MHz) 860 860 860 Note VCE (V) 25 25 25 IC (mA) 850 850 850 Th (C) 70 70 25 dim(dB)(1) -60 -60 -60 Po sync (W)(1) > typ. typ. 3,5 3,8 4,4
BLW98
GP (dB) > typ. typ. 6,5 7,0 7,0
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
handbook, full pagewidth
VSWR input < 1.1 50
C1
L1
T.U.T.
L4
C8
VSWR output < 50 C9
C2
C12
L2 C5
L3 C6 R3 C10 C11
C3
R2 BD136 C4 BY206 R1
R4
C7
R5 R6 R7 +VS
MGP724
Fig.9 Class-A test circuit at fvision = 860 MHz.
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
List of components: C1 C3 C5 C7 C8 C9 = C2 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) = C4 = 100 nF polyester capacitor = C6 = 1 nF feed-through capacitor = 5,6 pF ceramic capacitor = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
BLW98
C10 = 10 F/40 V solid aluminium electrolytic capacitor C11 = 470 nF polyester capacitor C12 = 2 x 3,3 pF chip capacitors (in parallel) R1 R2 R3 R4 L1 L2 L3 L4 = 150 carbon resistor (0,25 W) = 1,8 k carbon resistor (0,5 W) = 33 carbon resistor (0,5 W) = 220 carbon resistor (1 W) = stripline (13,6 mm x 6,9 mm) = microchoke 0,47 H (cat. no. 4322 057 04770) = 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 2 x 5 mm = stripline (40,8 mm x 6,9 mm) R5 = 4 x 12 carbon resistors in parallel (1 W each) R6 = 1 k carbon resistor (0,25 W) R7 = 220 carbon potentiometer (0,25 W)
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1,5 mm.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
96 mm
handbook, full pagewidth
rivet
47 mm
C5
VBB C6 C3 L3
+VCC C11
L2 L4 C12 C9
C8 L1
C1 C2
band V
MGP725
Note Hole in printed-circuit board: O 9,7 mm.
Fig.10 Component layout and printed circuit board for 860 MHz class-A test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
handbook, full pagewidth
-50
MGP726
15
dim (dB)
dcm (%)
-55 dim
10
dcm -60 5
-65
0
2
4
6
8
Po sync (W)
0 10
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of Po sync. Typical values; VCE = 25 V; IC = 850 mA;- - -Th = 25 C;Th = 70 C; fvision = 860 MHz. 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal -75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB.
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
handbook, halfpage
5 ri, xi () 4
MGP727
handbook, halfpage
10
MGP728
RL, XL () xi 8 RL
3 XL 2 ri 1 6
0 400
650
f (MHz)
900
4 400
650
f (MHz)
900
Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 C.
Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 C.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
handbook, halfpage
12
MGP729
Gp (dB) 8
4
0 400
650
f (MHz)
900
Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 C.
Fig.14
August 1986
11
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW98
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
12
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW98
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
13

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