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Power F-MOS FETs
2SK2571
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
4.5
unit: mm
15.50.5
3.20.1
10.0
3.00.3
5
26.50.5
5
23.4 22.00.5
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
2.0 1.2
5
18.60.5
5 5
4.0 2.00.2 1.10.1
2.0
0.70.1
3.30.3 0.70.1
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse
Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg
Ratings 450 30 13 26 200 100 3 150 -55 to +150
Unit V V A A mJ W C C
5
5.50.3
s Absolute Maximum Ratings (TC = 25C)
5.450.3
5.450.3
1
2
3
1: Gate 2: Drain 3: Source TOP-3E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 2.4mH, IL = 13A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 360V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 VDD = 150V, ID = 7A VGS = 10V, RL = 21.4 110 90 220 1.25 41.67 5 450 2 0.34 8 -2 5 0.45 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns C/W C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
2.0
1
Power F-MOS FETs
Area of safe operation (ASO)
102 120
2SK2571
PD Ta
Allowable power dissipation PD (W)
(1) TC=Ta (2) Without heat sink PD=3.0W 102
IAS L-load
TC=25C
Non repetitive pulse TC=25C IDP
Drain current ID (A)
ID 10 DC
t=1ms
80 (1) 60
Avalanche current IAS (A)
100
10 E=200mJ
100ms 1 10ms
40
1
20 (2)
10-1 10-1
1
10
102
103
0 0 20 40 60 80 100 120 140 160
10-1 10-1
1
10
102
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VGS
30 VDS=25V TC=25C 25 6
Vth TC
Drain to source ON-resistance RDS(on) ()
1.2 VDS=25V ID=1mA 5
RDS(on) ID
TC=25C 1.0
20
Gate threshold voltage Vth (V)
Drain current ID (A)
4
0.8
15
3
0.6
10
2
0.4
VGS=10V 15V
5
1
0.2
0 0 2 4 6 8 10
0 0 25 50 75 100 125 150
0 0 5 10 15 20 25
Gate to source voltage VGS (V)
Case temperature TC (C)
Drain current ID (A)
VDS VGS
35 20
| Yfs | ID
Forward transfer admittance |Yfs| (S)
TC=25C VDS=25V TC=25C
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000 f=1MHz TC=25C
Drain to source voltage VDS (V)
30
3000 Ciss
25
15
1000
20 ID=26A
10
300
15
100
Coss Crss
10 13A 6.5A 3.25A 0 0 5 10 15 20 25 30
5
5
30
0 0 5 10 15 20 25
10 0 50 100 150 200 250
Gate to source voltage VGS (V)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
ton, tf, td(off) ID
300 VDD=150 VGS=10V TC=25C td(off) 200 300 ID=13A
2SK2571
VDS, VGS Qg
12
Drain to source voltage VDS (V)
250
250 VDS 200 VGS 150
10
8
150 ton 100 tf 50
6
100
4
50
2
0 0 2 4 6 8 10 20
0 0 20 40 60 80
0 100
Drain current ID (A)
Gate charge amount Qg (nC)
Rth(t) t
102 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 10 (1) (2)
Thermal resistance Rth(t) (C/W)
1
10-1
10-2 10-3
10-2
10-1
1
10
102
103
Time t (s)
Gate to source voltage VGS (V)
Switching time ton,tf,td(off) (ns)
3

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