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| Ordering number : ENA0437A 2SB1739 / 2SD2720 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1739 / 2SD2720 Features * * * * Compact Motor Driver Applications Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Specifications ( ) : 2SB1739 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings (--)40 (--)30 (-)6 (-)3 (-)5 1 15 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance Symbol ICBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10A, IE=0A IC=(--)10A, RBE= IC=(--)10mA, RBE= IF=(--)0.5A 0.8 (-)40 (-)40 (-)30 (--)1.5 Ratings min 70 50 100 (55)40 (--0.28)0.23 (-0.6)0.5 (--)1.5 MHz pF V V V V V V k typ max (--)1.0 Unit A Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006 MS IM / 72006EA MS IM TC-00000064 No. A0437-1/5 2SB1739 / 2SD2720 Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 0.5 6.5 5.0 2.3 4 4 7.0 1.5 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Electrical Connection 2SB1739 Collector 2SD2720 Collector Base RBE Base RBE Emitter Emitter --1.0 IC -- VCE 2SB1739 --0.9 --9 A 0m m A --8mA 1.0 IC -- VCE 2SD2720 9m mA --7mA 0.9 A 8mA 7mA Collector Current, IC -- A Collector Current, IC -- A --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --6mA 0.8 0.7 0.6 6mA 5mA 4mA --1 --5mA --4mA --3mA --2mA 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 10 3mA 2mA IB=0mA IB=0mA --1mA --0.5 IT11149 1mA 0.4 0.5 IT11150 Collector-to-Emitter Voltage, VCE -- V --3.0 IC -- VCE Collector-to-Emitter Voltage, VCE -- V 3.0 IC -- VCE 20mA 2SB1739 --2.5 2SD2720 2.5 --20mA 18mA Collector Current, IC -- A Collector Current, IC -- A --2.0 --18mA --16mA --14mA --12mA 16mA 14mA 2.0 12mA --1.5 --10mA --8mA --6mA --4mA 10mA 1.5 8mA 1.0 --1.0 6mA 4mA --0.5 0.5 0 0 --2 --4 --6 --8 --2mA IB=0mA --10 IT11151 IB=0mA 0 0 2 4 6 8 2mA 10 IT11152 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No. A0437-2/5 2SB1739 / 2SD2720 --3.0 IC -- VBE 2SB1739 VCE= --2V 3.0 IC -- VBE 2SD2720 VCE=2V --2.5 2.5 Collector Current, IC -- A --2.0 Collector Current, IC -- A 2.0 --1.5 1.5 Ta= -25C 25C 75C --1.0 1.0 --0.5 0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11154 Base-to-Emitter Voltage, VBE -- V 3 2 IT11153 3 2 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SB1739 VCE= --2V 2SD2720 VCE=2V DC Current Gain, hFE 7 5 3 2 C 5 =7 Ta 5C C 2 5 --2 DC Current Gain, hFE 100 100 7 5 3 2 C 75 a= 5C T2 C 5 --2 10 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 7 5 IT11155 7 VCE(sat) -- IC Collector Current, IC -- A Ta= -25C 25C 75C IT11156 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB1739 IC / IB=20 5 2SD2720 IC / IB=20 3 2 C 25 --0.1 7 5 25 0.1 7 5 C =7 Ta 5C 5C --2 = Ta C 75 5C --2 3 2 --0.1 3 2 0.1 2 3 5 7 --1.0 2 3 5 IT11157 2 3 5 7 1.0 2 3 5 IT11158 Collector Current, IC -- A 3 Collector Current, IC -- A 3 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SB1739 IC / IB=20 VBE(sat) -- IC 2SD2720 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2 25C --1.0 25C 1.0 Ta= --25C Ta= --25C 7 75C 7 75C 5 5 3 --0.1 2 3 5 7 --1.0 2 3 5 IT11159 3 0.1 2 3 5 7 1.0 2 3 5 IT11160 Collector Current, IC -- A Collector Current, IC -- A No. A0437-3/5 2SB1739 / 2SD2720 7 VCE(sat) -- IB 2SB1739 IC= --2A 7 VCE(sat) -- IB 2SD2720 IC=2A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 3 Ta=75 C 2 25C 3 Ta=75C 2 25C --25C --25C --0.1 0.1 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Base Current, IB -- A --1.0 7 IT11161 1.0 VCE(sat) -- IB Base Current, IB -- A IT11162 VCE(sat) -- IB 2SB1739 7 2SD2720 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 IC= --2A 2 IC=2A 2 --1A --0.1 7 5 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 1A 0.1 7 5 3 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --0.5A 0.5A Base Current, IB -- A 3 IT11163 3 2 Base Current, IB -- A IT11164 Cob -- VCB Cob -- VCB 2SD2720 f=1MHz 2SB1739 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 2 100 7 5 100 7 5 3 2 3 2 --0.1 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 3 IT11165 3 f T -- IC Collector-to-Base Voltage, VCB -- V IT11166 f T -- IC Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 2 2SB1739 VCE= --2V 2 2SD2720 VCE=2V 100 7 5 100 7 5 3 2 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT11167 Collector Current, IC -- A IT11168 No. A0437-4/5 2SB1739 / 2SD2720 10 7 5 ASO ICP=5A IC=3A DC op 1.1 PC -- Ta 2SB1739 / 2SD2720 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 era tio n, P C= ms 0m s 10 1m 1.0 s 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3 5 0 20 IT11169 40 60 80 100 120 140 160 N o 1W s at he (N o k in he at sin k) 0.01 0.1 2SB1739 / 2SD2720 Ta=25C Single Pulse Mounted on a ceramic board (250mm2!0.8mm) For PNP minus sign is omitted. 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 16 15 14 Ambient Temperature, Ta -- C IT11170 PC -- Tc 2SB1739 / 2SD2720 Collector Dissipation, PC -- W 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT11171 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No. A0437-5/5 |
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