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VID 125-12P1 VIO 125-12P1 VDI 125-12P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability Square RBSOA
Preliminary data sheet
VIO
IJK
IC25 = 138 A = 1200 V VCES VCE(sat) typ. = 2.8 V
VID
IK10
VDI
AC1
X15
SV18
L9 NTC T16
PS18
A S
LMN
L9
X15 NTC
AC1
X16
B3
Pin arangement see outlines
IK10
F1
X16
IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 138 94 150 VCES 10 568 V V A A A s W
Features * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages * space and weight savings * reduced protection circuits * leads with expansion bend for stress relief Typical Applications * AC and DC motor control * AC servo and robot drives * power supplies * welding inverters
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 4.5 3.4 6.5 5 16 320 100 50 650 50 12.1 10.5 5.5 0.44 V V V mA mA nA ns ns ns ns mJ mJ nF 0.22 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved
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303
VID 125-12P1 VIO 125-12P1 VDI 125-12P1
Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 75 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
VIO Maximum Ratings 154 97 A A
Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns 0.45 K/W K/W
B3
Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K VDI
Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
VID
IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved
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303
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
VID 125-12P1 VIO 125-12P1 VDI 125-12P1
175
A 150 IC 125 175
TJ = 125C
TJ = 25C
VGE=17V 15V 13V 11V
A 150 IC 125 100 75
VGE=17V 15V 13V 11V
100 75 50 25 0 0,0
121T120
9V
50 25 0
9V
121T120
0,5
1,0
1,5
2,0
2,5
VCE
3,0 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5 V
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
VCE = 20V
125 A
IC
TJ = 25C
300 A 250 IF 200 150 100 50
121T120
TJ = 125C TJ = 25C
100 75 50 25 0 5 6 7 8 9 10
VGE
0
121T120
11 V
0,5
1,0
1,5
2,0
2,5
VF
3,0 V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
20
V VGE 15
VCE = 600V IC = 75A
120
A IRM
trr
300
ns trr
80
200
10 40 5
IRM TJ = 125C VR = 600V IF = 75A
100
0 0 100 200 300
QG
121T120
0 0 200 400 600 800 A/s
-di/dt
121T120
0
400
nC
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved
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303
VID 125-12P1 VIO 125-12P1 VDI 125-12P1
40
mJ Eon Eon td(on) tr
160 ns 120 t 80
20
mJ Eoff 15
Eoff td(off)
800 ns 600 t 400
30
20
10
VCE = 600V VGE = 15V
10
VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C
121T120
5
RG = 15 200 TJ = 125C
121T120
0 0 50 100
IC
0
0
0 50 100 IC
tf
0
150 A
150 A
B3
Fig. 7 Typ. turn on energy and switching times versus collector current
25
mJ
Fig. 8 Typ. turn off energy and switching times versus collector current
25
mJ Eoff
20
Eon
VCE = 600V VGE = 15V IC = 75A TJ = 125C
td(on) Eon
200 ns 160 t 120
2000
VCE = 600V VGE = 15V IC = 75A TJ = 125C
20 15 10 5
td(off)
ns 1600 t 1200 800 400
15 10 5 0 0 8 16 24 32 40
RG
121T120
Eoff
tr
80 40 0
121T120
48 56
0 0 8 16 24 32
RG
tf
40
48 56
0
Fig. 9
Typ. turn on energy and switching times versus gate resistor
1 K/W 0,1 ZthJC
Fig.10 Typ. turn off energy and switching times versus gate resistor
200
A
160
ICM
diode
120 80 40 0 0 200 400 600
VCE
121T120
0,01
RG = 15 TJ = 125C VCEK < VCES
IGBT
0,001 0,0001
single pulse
VID...125-12P1
800 1000 1200 V
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved
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303

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