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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
Performance Advantages * 50% real estate reduction over competition * On State Dissipation is 1.5 to 2 times less than competition * Switching Characteristics - (ton) - up to 10 times faster * Can handle 3 times the surge as competition for the same physical area * Custom designs in 3-4 weeks (competition does not offer custom arrangements) Features
* Monolithic Flip Chip Construction, all contacts on one side * Available with solderable surface * Common Anode/Cathode available * Available in 2, 3, 4, 5, 6, 8 element arrays (see outlines below) * Available in 5-8.5 Volt versions * Power Rating is 50 Joules at 37 C * Also available in TVS (TVSMEDA Series)
PRODUCT CAPABILITY SHEET
Monolithic Flip Chip Thyristor Surge Protection Device Array for Implantable Applications
Proposed Maximum Ratings @ 37 C-Body Temperature (unless otherwise specified)
Part Number VDRM Volts MAX TSPDMEDA001-5 TSPDMEDA001-7.5 TSPDMEDA001-8.5 5 7.5 8.5 VT VT ITSM IR ton VC CO @1 A @8 A @ VWM 1kV/us @ 50 @ 0V Volts Volts mA mA Volts Volts Amps nA nsec Volts pF MIN MAX MAX MIN MAX MAX MAX MAX MAX MAX MAX 6 8 9 8 12 12 20 20 20 1 1 1 3 3 3 6 6 6 30 30 30 100 100 100 500 500 500 10 15 15 100 100 100 VZ VBO IBO IH
Monolithic Flip Chip Configurations (in development)
2 mm Max
Elementary Cell Schematic
Common Cathode Common Anode
These Monolithic Arrays will feature multiple devices on one chip with all contacts on one surface. The surfaces are available with a solderable metal contact. For more information on these devices contact Microsemi's Santa Ana division for custom configurations and designs.
2.5 mm Max
Input
2 mm Max
MSC0988.PDF
5 mm Max

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