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| Ordering number : ENN8216 TIG014TS TIG014TS Features * * * * * N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. 4V drive. Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP Tch Tstg PW1ms PW500s, duty cycle0.5% Conditions Ratings 400 6 8 150 150 --40 to +150 Unit V V V A C C Electrical Characteristics at Ta=25C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CES ICES IGES VGE(off) VCE(sat) Cies Coes Cres IC=5mA, VGE=0 VCE=320V, VGE=0 VGE=6V, VCE=0 VCE=10V, IC=1mA IC=150A, VGE=4V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz 0.5 4.2 4400 65 60 Conditions Ratings min 400 10 10 1.2 5.8 typ max Unit V A A V V pF pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505PJ TS IM TB-00001119 No.8216-1/4 TIG014TS Package Dimensions unit : mm 2244 3.0 8 5 Electrical Connection G 8 E 7 E 6 E 5 0.95 0.65 0.425 6.4 4.5 0.5 0.95 1 4 0.25 0.125 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate SANYO : TSSOP8 0.05 1.0 1 C 2 C 3 C 4 C 200 180 IC -- VCE Tc=25C 200 IC -- VGE Tc=25C VCE=5V Collector Current, IC -- A 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.0 V Collector Current, IC -- A 160 V =4 GE .5V 180 160 140 120 100 80 60 40 20 0 3.0V 2.5V 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 6.0 IT07620 6.0 VCE -- VGE Gate-to-Emitter Voltage, VGE -- V IT07621 VCE -- VGE Tc= --25C Collector-to-Emitter Voltage, VCE -- V 5.5 5.0 4.5 4.0 3.5 Tc=25C Collector-to-Emitter Voltage, VCE -- V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT07623 IC =150A 130A 100A IC =150A 130A 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT07622 100A Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Voltage, VGE -- V No.8216-2/4 TIG014TS 6.0 VCE -- VGE Tc=75C Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 6 VCE(sat) -- Tc VGE=4V Collector-to-Emitter Voltage, VCE -- V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT07624 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 0 --50 --25 0 25 50 75 100 125 150 5 IC=1 50 I C= 4 150 A A 130A 130A 3 100A 100A 2 1 Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 1.0 Case Temperature, Tc -- C IT07625 VGE(off) -- Tc Cies, Coes, Cres -- VCE Cies 0.9 0.8 0.7 0.6 0.5 Cies, Coes, Cres -- pF Coes Cres 0.4 0.3 --50 VCE=10V IC=1mA --25 Case Temperature, Tc -- C 10 7 IT07626 160 140 120 100 80 60 40 20 0 0 SW Time -- IC Collector Current(Pulse), ICP -- A Collector-to-Emitter Voltage, VCE -- V IT07627 ICP -- VGE CM=400F Tc=25C Tc=70C Switching Time, SW Time -- ns 5 3 2 tf td(off) 1.0 7 5 3 2 tr 0.1 RL=1.1 TC= 25C VGE= 4.0V RG=30 1.0 2 3 5 7 10 td(on) 2 3 5 7 100 2 3 1 2 3 4 5 6 7 8 IT07629 Collector Current, IC -- A 450 400 IT07628 CM -- ICP Gate-to-Emitter Voltage, VGE -- V Maximum Capacitor, CM -- F 350 300 250 200 150 100 50 0 0 VCM=330V Tc70C VGE=4.2V RG42 20 40 60 80 100 120 140 160 Collector Current(Pulse), ICP -- A IT07630 No.8216-3/4 TIG014TS Note1. The gate series resistance RG must be 42 or more to protect the device when it is turned off. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off. Note : TIG014TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8216-4/4 |
Price & Availability of TIG014TS
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