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| CXG1106EN High Power 2 x 4 Antenna Switch MMIC with Integrated Control Logic Description The CXG1106EN is a high power antenna switch MMIC for PDC 800MHz and 1.5GHz handsets. The CXG1106EN is suited to connect Tx/Rx to one of 4 antennas. The CXG1106EN has on-chip logic circuit for operation with 3 CMOS inputs. The Sony JFET process is used for low insertion loss and low voltage operation. Features * Low insertion loss: 0.25dB @900MHz, 0.35dB @1.5GHz * High linearity: Harmonic < - 65dBc * CMOS compatible input control * Small package: 16-pin VSON (2.7mm x 3.5mm) Applications 2 x 4 antenna switch for digital cellular such as PDC handsets Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25C) * Bias voltage VDD * Control voltage * Operating temperature * Storage temperature VDD Topr Tstg 16 pin VSON (Plastic) 7 5 -35 to +85 -65 to +150 V V C C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The actual ESD test data will be available later. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E00X14C2Z-PS CXG1106EN Block Diagram/Pin Configuration F8 GND4 9 8 RF3 RF4 10 F1 GND 11 F2 F3 RF5 12 F5 GND 13 F9 RF6 14 F10 F6 F4 F7 7 GND 6 RF2 5 GND 4 RF1 3 GND1 CTLC 15 2 VDD CTLB 16 1 CTLA Truth Table On Pass RF3 - RF2 RF3 - RF4 RF5 - RF2 RF5 - RF4 RF5 - RF6 RF5 - RF1 CTLA H H L L L L CTLB -- -- L L H H CTLC L H L H L H F1 L H H L L L F2 H L L H L L F3 L H H L L L F4 H L L H L L F5 L L L L H L F6 L L L L L H F7 L H L H H H F8 H L H L H H F9 H H H H L H F10 H H H H H L -2- CXG1106EN Recommended Circuit GND4 Z4 9 8 CRF (100pF) RF3 RF4 CRF (100pF) GND RF5 CRF (100pF) GND RF6 CRF (100pF) CTLC Rctl (1k) Cbypass (100pF) CTLB Rctl (1k) Cbypass (100pF) 10 7 GND 11 6 CRF (100pF) RF2 12 5 GND 13 4 CRF (100pF) RF1 14 3 Z1 GND1 15 2 VDD Cbypass (100pF) CTLA Cbypass (100pF) 16 1 When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1k is recommended. CRF: This capacitor is used for RF decoupling and must be used for all application. 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. DC Bias Condition Item VDD Vctl (H) Vctl (L) Min. +2.4 +2.0 0 Typ. +3.0 +3.0 Max. +3.6 +3.6 +0.4 (Ta = 25C) Unit V V V -3- CXG1106EN Electrical Characteristics 1 Item Symbol Port RF3 - RF2 RF3 - RF4 Insertion loss IL RF5 - RF2 RF5 - RF4 RF5 - RF6 RF5 - RF1 RF3 - RF2 RF3 - RF4 Isolation ISO. RF5 - RF2 RF5 - RF4 RF5 - RF6 RF5 - RF1 VSWR VSWR 2fo Harmonics 3fo 50kHz ACP 100kHz 1dB compression input power Switching speed Bias current Control current P1dB TSW IDD Ictl VDD = 3.0V Vctl (H) = 3V RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 1 1 2 2 2 2 1 1 2 2 2 2 50 3 3 3 3 3 3 3 3 VDD = 2.8V VDD = 2.8V 33 33 20 23 25 21 22 27 Condition (Ta = 25C) Min. Typ. Max. Unit 0.25 0.50 0.25 0.50 0.45 0.70 0.55 0.80 0.35 0.60 0.35 0.60 23 26 28 24 25 33 1.2 -75 -75 -67 -67 -67 -67 -75 -75 35 35 2 0.45 0.75 40 70 1.6 -60 -60 -60 -60 -57 -57 -65 -65 dB dB dB dB dB dB dB dB dB dB dB dB -- dBc dBc dBc dBc dBc dBc dBc dBc dBm dBm s mA A 1 Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 889MHz to 960MHz 2 Pin = 10dBm, 0/3V control, VDD = 3.0V, 810MHz to 885MHz 3 /4-shifted DQPSK, Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 889MHz to 960MHz, ACP (50kHz) < - 70dBc, ACP (100kHz) < - 75dBc, 2nd harmonic < - 75dBc, 3rd harmonic < - 75dBc -4- CXG1106EN Electrical Characteristics 2 Item Symbol Port RF3 - RF2 RF3 - RF4 Insertion loss IL RF5 - RF2 RF5 - RF4 RF5 - RF6 RF5 - RF1 RF3 - RF2 RF3 - RF4 Isolation ISO. RF5 - RF2 RF5 - RF4 RF5 - RF6 RF5 - RF1 VSWR VSWR 2fo Harmonics 3fo 50kHz ACP 100kHz 1dB compression input power Switching speed Bias current Control current P1dB TSW IDD Ictl VDD = 3.0V Vctl (H) = 3V RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 RF3 - RF2 RF3 - RF4 1 1 2 2 2 2 1 1 2 2 2 2 50 3 3 3 3 3 3 3 3 VDD = 2.8V VDD = 2.8V 33 33 17 21 24 19 18 25 Condition (Ta = 25C) Min. Typ. Max. Unit 0.40 0.65 0.35 0.60 0.60 0.85 0.80 1.05 0.40 0.65 0.40 0.65 20 24 27 22 21 31 1.2 -75 -75 -67 -67 -67 -67 -75 -75 35 35 2 0.45 0.75 40 70 1.6 -60 -60 -60 -60 -57 -57 -65 -65 dB dB dB dB dB dB dB dB dB dB dB dB -- dBc dBc dBc dBc dBc dBc dBc dBc dBm dBm s mA A 1 Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 1429MHz to 1453MHz 2 Pin = 10dBm, 0/3V control, VDD = 3.0V, 1477MHz to 1501MHz 3 /4-shifted DQPSK, Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 1429MHz to 1453MHz, ACP (50kHz) < - 70dBc, ACP (100kHz) < - 75dBc, 2nd harmonic < - 75dBc, 3rd harmonic < - 75dBc -5- CXG1106EN Package Outline Unit: mm 16PIN VSON (PLASTIC) 0.9 MAX 0.6 3.5 A S 0.05 S 0.35 0.1 2.5 B 0.4 1.4 4x 0.2 S A B 2x 0.2 S B 0.35 0.1 Soldrer Plating 0.13 0.025 + 0.09 0.14 - 0.03 NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. TERMINAL SECTION PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE VSON-16P-01 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.02 g 16PIN VSON (PLASTIC) 0.9 MAX 0.6 3.5 A S 0.35 0.1 2.5 0.05 S 0.03 0.03 0.2 0.01 0.23 0.02 0.2 0.01 0.23 0.02 0.5 0.2 0.05 M S A-B B 0.4 1.4 4x 2.7 2x 0.2 S B 0.35 0.1 0.2 S A B 0.05 M S A-B 0.03 0.03 Soldrer Plating 0.13 0.025 + 0.09 0.14 - 0.03 NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. TERMINAL SECTION PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE VSON-16P-01 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.02 g LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18m 0.5 0.2 2.7 -6- Sony Corporation |
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