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| PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE CT15SM-24 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e VCES ............................................................................. 1200V IC ......................................................................................... 15A High Speed Switching Low VCE Saturation Voltage q TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg -- (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 1200 20 30 15 30 250 -40 ~ +150 -40 ~ +150 4.8 Unit V V V A A W C C g Feb.1999 Typical value PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter (Tj = 25C) Test conditions IC = 1mA, VGE = 0V VGE = 30V, VCE = 0V VCE = 1200V, VGE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 1200 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 6.0 2.7 1600 150 45 50 150 150 250 -- Max. -- 0.5 1 7.5 3.6 -- -- -- -- -- -- -- 0.50 Unit V A mA V V pF pF pF ns ns ns ns C/W Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance VCC = 600V, Resistance load, IC = 15A, VGE = 15V, RGE = 20 Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 20 COLLECTOR CURRENT IC (A) VGE = 20V 15V OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C 11V 16 8 12 10V 6 8 4 IC = 30A 15A 4 9V 2 10A 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 5 COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25C COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 20 VCE = 10V Tj = 25C 4 16 3 12 2 8 1 4 0 0 4 8 12 16 20 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 CAPACITANCE Cies, Coes, Cres (pF) Cies SWITCHING TIME (ns) 104 7 5 3 2 103 7 5 3 2 3 2 102 7 5 3 2 101 0 10 23 tf td(off) tr td(on) Tj = 25C VCC = 600V VGE = 15V RG = 20 102 7 5 3 Tj = 25C 2 VGE = 0V 101 f = 1MHZ Coes Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 101 23 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 24 20 16 600V VCC = 400V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 100 TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 10-1 7 5 3 2 7 5 3 2 12 8 4 0 10-2 7 5 3 2 10-2 7 5 3 2 0 20 40 60 80 100 10-3 10-3 10-5 2 3 5 710-4 2 3 5 710-3 PULSE WIDTH tw (s) Feb.1999 GATE CHARGE Qg (nc) |
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