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Advance Information W19B32XMT/B
4M x 8/2M x 16 3V DUAL BANK FLASH MEMORY
GENERAL DESCRIPTION
The W19B32XMT/B is a 32Mbit, 2.7~3.6 volt dual bank CMOS flash memory organized as 4M x 8 or 2M x 16 bits. The word-wide (x 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7-DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B32XMT/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.
FEATURES
Performance * 2.7~3.6-volt write (program and erase) operations * Fast write operation * Read access time: 70, 90 nS * Typical program/erase cycles: - 100K * Twenty-year data retention * Ultra low power consumption Architecture * Dual Bank architectures - W19B322M: bank1: 4M; bank2: 28M - W19B323M: bank1: 8M; bank2: 24M - W19B324M: bank1: 16M; bank2: 16M * Security Sector Size: 256 Bytes - The Security Sector is an OTP; once the sector is programmed, it cannot be erased * Simultaneous Read/write operation - Data can be continuously read from one bank while processing erase/program functions in other bank with zero latency * JEDEC standard byte-wide and wordwide pinouts * TTL compatible I/O * Manufactured on WinStack 0.18m process technology * Available packages: 48-pin TSOP and 48-ball TFBGA (8x11mm) Software Features * Compatible with common Flash Memory Interface (CFI) specification - Flash device parameters stored directly on the device - Allows software driver to identify and use a variety of different current and future Flash products * Erase Suspend/Erase Resume - Suspends erase operations to allow programming in same bank * End of program detection - Software method: Toggle bit/Data polling * Unlock Bypass Program command - Reduces overall programming time when issuing multiple program command sequences Hardware Features * Ready/#Busy output (RY/#BY) - Detect program or erase cycle completion * Hardware reset pin (#RESET) - Reset the internal state machine to the read mode * #WP/ACC input pin - Write protect (#WP) function allows protection of two outermost boot sectors, regardless of sector protection status - Acceleration (ACC) function accelerates program timing * Sector Protection - Sectors can be locked in-system or via programmer - Temporary Sector Unprotect allows changing data in protected sectors insystem
Advance Information W19B32XMT/B
4M x 8/2M x 16 3V DUAL BANK FLASH MEMORY
Headquarters
No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5665577 http://www.winbond.com.tw/
Winbond Electronics Corporation America
2727 North First Street, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-5441798
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai, 200336 China TEL: 86-21-62365999 FAX: 86-21-62365998
Taipei Office
9F, No.480, Rueiguang Rd., Neihu Chiu, Taipei, 114, Taiwan, R.O.C. TEL: 886-2-8177-7168 FAX: 886-2-8751-3579
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18 Shinyokohama Kohoku-ku, Yokohama, 222-0033 TEL: 81-45-4781881 FAX: 81-45-4781800
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City, No. 378 Kwun Tong Rd., Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064
Please note that all data and specifications are subject to change without notice. All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.

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