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| SBH52454x FSAN BIDITM Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier * Designed for applications in passive-optical networks according FSAN, ITU-G.983 * Suitable for ONU applications, 622 Mbit/s downstream bitrate, Class B * Uncooled 1300 nm FPLaser Diode with Multi-Quantum Well structure * Ternary Moniordiode at rear laser mirror for monitoring and control of radiant power * Integrated Wavelength Division Multiplexer * InGaAs/InP-PIN-photodiode with 1300 nm blocking filter and integrated 622 Mbit/s transimpedance amplifier * Hermetically sealed subcomponents, similar to TO 18 * With singlemode fiber pigtail Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Symbol Value - 40 ... + 85 - 40 ... + 85 260 Unit C C C TC Tstg TS Laser Diode Direct forward current Radiant power CW Reverse Voltage Symbol Value 120 4 2 Unit mA mW V IF max Popt max VR max page(1/5) Siemens Semiconductors 1998-08-21 SBH52454x FSAN Monitor Diode Reverse Voltage Forward Current Symbol Value 10 2 Unit V mA VR max IF max PIN Photodiode with Preamplifier Maximum Voltage Maximum optical power (average) Symbol Value 6 1 Unit V mW VCC max Pport max Characteristics All optical data refer to the optical port at - 40 to + 85 C Package-Temperature. Laser Diode Optical output power (average) Optical output power (peak) Emission wavelength center of range (Popt = 1 mW) Spectral Width (RMS, Popt = 1 mW) Threshold current Forward voltage (Popt = 1 mW) Radiant power at Ith Slope efficiency Variation of 1st derivative of P/I (0.1 to 2.0 mW) Differential series resistance (Popt = 1 mW) Rise and fall time (10% - 90%) Temperature coefficient of wavelength Symbol Min 1 2 1260 - 2 - - 35 - 30 - - - Max - - 1360 5.8 45 1.5 50 150 30 8 0.5 0.5 Unit mW mW nm nm mA V W mW/A % ns nm/K Popt av Popt peak Ith VF Pth S dP/dI rS tr, tf TC Siemens Semiconductors page(2/5) 1998-08-21 SBH52454x FSAN Monitor-Diode Dark current, VR = 5 V, Popt = 0 Photocurrent, Popt = 1 mW Capacitance, VR = 5 V, f = 1MHz Tracking error, VR = 5 V, (see note 1) Symbol Min - 100 - -1 Max 0.5 1000 10 1 Unit A A pF dB IR IP C5 TE PIN Photodiode with Preamplifier Supply Voltage Supply Current Optical Sesitivity (BER 10 ) Linear Bandwidth (- 3 dB) Optical Overload (average) Transimpedance (differential) Gain (differential) -10 Symbol Min 4.5 - - 28 400 -8 80 70 Max 5.5 47 - - - 120 175 Unit V mA dBm MHz dBm k mV/W VCC ICC S BW Pmax RT G Module Optical Crosstalk (see note 2) Backreflection (Return Loss) @ in = 1310 nm Backreflection (Return Loss) @ in = 1550 nm Symbol CRT - - Value < - 47 <-6 < - 20 Unit dB dB dB Note 1: The tracking error TE is the variation rate of Popt at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon(T = 25 C, Popt = 1 mW). Thus, TE is given by: TE [dB ] = 10 x log Popt[Tc ]- Popt [25C ] Popt [25C ] Siemens Semiconductors page(3/5) 1998-08-21 SBH52454x FSAN Note 2: Optical Crosstalk is defined as CRT = 10 x log(P2/P1) with: P1 = Popt = 1 mW with no optical input power Pport and P2 the necessary optical input power Pport at = 1550 nm to get for Popt = 0 the same receiver signal level as before. Accompanying Information T = 25 C: T = 85 C: Threshold current, slope eficiency, monitor current for 1 mW output power, peak wavelength for 1 mW output power. Threshold current, slope efficiency Pigtail Fiber Pigtail, Single Mode, Silica Mode field diameter Cladding diameter Mode field/cladding concentricity error Cladding non-circularity Mode field non-circularity Cut-off wavelength Jacket diameter Bending radius Tensile strength fiber/case Length Min 8 123 - - - 1250 0.8 30 5 0.8 Max 10 127 1 2 6 - 1.0 - - 1.2 Unit m m m % % nm mm mm N m Connector all standard connectors like FC/PC, SC, SC APC, available Siemens Semiconductors page(4/5) 1998-08-21 SBH52454x FSAN Schematic Package Outline and Pinning BIDI 4 1 4 3 2 Transmitter 1 3 2 Receiver Pigtail Transmitter 1 LK 2 Case 3 MK, LA 4 MA Receiver 1 Out + 2 Gnd, Case 3 Out 4 VCC Siemens Semiconductors page(5/5) 1998-08-21 |
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