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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature
MTP29N15E
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM
(R)
N-Channel D
G S
CASE 221A-09, TO-220AB
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- STARTING TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds E-FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RJC RJA TL
Value 150 150 20 40 29 19 102 125 1.0 - 55 to 150 421 1.0 62.5 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W C
REV 1
(c) Motorola TMOS Motorola, Inc. 1998
Power MOSFET Transistor Device Data
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MTP29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 150 Vdc, VGS = 0 Vdc) (VDS = 150 Vdc, VGS = 0 Vdc, TJ =125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 14.5 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc, ID = 29 Adc) (VGS = 10 Vdc, ID = 14.5 Adc, TJ = 125C) Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge ( (VDS = 120 Vdc, ID = 29 Adc, Vd , Ad , VGS = 10 Vdc) Vdc, (VDD = 75 Vd ID = 29 Adc, Ad VGS = 10 Vdc Vdc, RG = 9.1 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 29 Adc, VGS = 0 Vdc) (IS = 29 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time ( (IS = 29 Adc, VGS = 0 Vdc, Ad , Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- -- LS -- 7.5 -- 3.5 4.5 -- -- nH trr ta tb QRR VSD -- -- -- -- -- -- 0.92 0.84 174 126 48 1.4 1.3 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 19 95 90 85 83 12 37 23 40 190 180 170 120 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 2300 450 130 3220 630 260 pF VGS(th) 2.0 -- RDS(on) -- VDS(on) -- -- gFS 10 -- -- 20 2.4 2.1 -- mhos 0.054 0.07 Vdc 2.7 5.4 4.0 -- Vdc mV/C Ohms V(BR)DSS 150 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 151 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
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Motorola TMOS Power MOSFET Transistor Device Data
MTP29N15E
TYPICAL ELECTRICAL CHARACTERISTICS
60 ID , DRAIN CURRENT (AMPS) VGS = 10 V 9V 50 TJ = 25C 8V 40 30 20 5V 10 0 0 1 4.5 V 4V 2 4 5 3 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9 10 7V 60 6.5 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 TJ = 100C 10 - 55C 0 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25C VDS 10 V
6V
5.5 V
Figure 1. On-Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.14 VGS = 10 V 0.12 0.10 0.08 0.06 0.04 -55C 0.02 0 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) 25C TJ = 100C
0.07 TJ = 25C 0.065 0.06 0.055 0.05 0.045 0.04 0 10 20 40 30 ID, DRAIN CURRENT (AMPS) 50 60 VGS = 10 V 15 V
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.25 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 - 50 VGS = 10 V ID = 14.5 A
1000 VGS = 0 V 100 IDSS , LEAKAGE (nA) TJ = 125C
100C
10
25C
1
0.1 - 25 0 25 50 75 100 125 150 0 20 TJ, JUNCTION TEMPERATURE (C) 40 60 80 100 120 140 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 160
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-To-Source Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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MTP29N15E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG - VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn-on and turn-off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG - VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off-state condition when calculating td(on) and is read at a voltage corresponding to the on-state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.
7500 VDS = 0 V VGS = 0 V 7000 6500 Ciss 6000 5500 5000 Crss 4500 4000 3500 3000 2500 2000 1500 1000 Crss 500 0 -10 -5 0 5 VGS VDS
TJ = 25C
C, CAPACITANCE (pF)
Ciss
Coss 10 15 20 25
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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Motorola TMOS Power MOSFET Transistor Device Data
MTP29N15E
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 9 8 7 6 5 4 3 2 1 0 0 Q3 10 20 30 40 50 VDS 60 70 80 90 Qg, TOTAL GATE CHARGE (nC) 40 TJ = 25C ID = 29 A 20 0 Q1 Q2 QT VGS 120 100 80 60 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100 t, TIME (ns)
tf td(off) td(on)
tr
10
1 1 10 RG, GATE RESISTANCE (OHMS) 100
Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation versus Gate Resistance
DRAIN-TO-SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode are very important in systems using it as a freewheeling or commutating diode. Of particular interest are the reverse recovery characteristics which play a major role in determining switching losses, radiated noise, EMI and RFI. System switching losses are largely due to the nature of the body diode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 15. It is this stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. Obviously, repeatedly forcing the diode through reverse recovery further increases switching losses. Therefore, one would like a diode with short trr and low QRR specifications to minimize these losses. The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high
30 25 20 15 10 5 0 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C
di/dts. The diode's negative di/dt during ta is directly controlled by the device clearing the stored charge. However, the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ratio of tb/ta serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell MOSFET diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses.
I S , SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
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MTP29N15E
di/dt = 300 A/s I S , SOURCE CURRENT Standard Cell Density trr High Cell Density trr tb ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, "Transient Thermal Resistance - General Data and Its Use." Switching between the off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded, and that the transition time (tr, tf) does not exceed 10 s. In addition the total power
1000 VGS = 20 V SINGLE PULSE TC = 25C 10 ms 100 ms 1 ms 10 ms dc EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ)
averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RJC). A power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non-linearly with an increase of peak current in avalanche and peak junction temperature.
450 400 350 300 250 200 150 100 50 0 100 1000 25 50 75 100 125 150 ID = 29 A
ID , DRAIN CURRENT (AMPS)
100
10
1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10
0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 12. Maximum Rated Forward Biased Safe Operating Area
Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature
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Motorola TMOS Power MOSFET Transistor Device Data
MTP29N15E
TYPICAL ELECTRICAL CHARACTERISTICS
1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1E-05 1E-04 1E-03 1E-02 t, TIME (seconds) 1E-01 1E+00 1E+01 P(pk) t2 DUTY CYCLE, D = t1/t2 t1 RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RJA(t)
Figure 14. Thermal Response
di/dt IS trr ta tb TIME tp IS 0.25 IS
Figure 15. Diode Reverse Recovery Waveform
Motorola TMOS Power MOSFET Transistor Device Data
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MTP29N15E
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 16 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 "RAMP" 200C
STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP"
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 "SPIKE" "SOAK" 170C 160C
STEP 6 VENT
STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT
150C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
100C 100C
140C
DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 16. Typical Solder Heating Profile
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Motorola TMOS Power MOSFET Transistor Device Data
MTP29N15E
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
CASE 221A-09 ISSUE Z
Motorola TMOS Power MOSFET Transistor Device Data
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MTP29N15E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
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Motorola TMOS Power MOSFET Transistor MTP29N15E/D Device Data

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