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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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FETKYTM
MMDFS3P303
P-Channel Power MOSFET with Schottky Rectifier 30 Volts RDS(on) = 0.100 W VF = 0.42 Volts
MOSFET and Schottky Rectifier
The FETKYTM product family incorporates low RDS(on), MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck-Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.
* * * * * * *
HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier Lower Component Placement and Inventory Costs along with Board Space Savings R2 Suffix for Tape and Reel (2500 units/13 reel) Mounting Information for SO-8 Package Provided IDSS Specified at Elevated Temperature Applications Information Provided Marking: 3P303
A A S G 1 2 3 4 5 8 7 6 C C D D
CASE 751-06, Style 18 (SO- 8)
TM
MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) (1) (2)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C -- Continuous @ TA = 100C -- Single Pulse (tp 10 ms) Symbol VDSS VDGR VGS ID ID IDM PD EAS Value 30
TOP VIEW Unit Vdc Vdc Vdc Adc Apk Watts mJ
"20
3.5 2.25 12 2.0 375
30
v
Total Power Dissipation @ TA = 25C (3) Single Pulse Drain-to-Source Avalanche Energy -- STARTING TJ = 25C VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (3) (Rated VR) TA = 100C Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) VRRM VR IO Ifrm Ifsm 30 3.0 6.0 30 Volts Amps Amps Amps
DEVICE MARKING
3P303 Device
ORDERING INFORMATION
Reel Size Tape Width Quantity 2500 units
MMDFS3P303R2 13 12 mm embossed tape (1) Negative sign for P-channel device omitted for clarity. (2) Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. (3) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. FETKY is a trademark of International Rectifier.
(c) Motorola TMOS Motorola, Inc. 1998
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Product Preview Data
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MMDFS3P303
THERMAL CHARACTERISTICS -- SCHOTTKY AND MOSFET
Thermal Resistance -- Junction-to-Ambient (1) -- MOSFET Thermal Resistance -- Junction-to-Ambient (2) -- MOSFET Thermal Resistance -- Junction-to-Ambient (3) -- MOSFET Thermal Resistance -- Junction-to-Ambient (1) -- Schottky Thermal Resistance -- Junction-to-Ambient (2) -- Schottky Thermal Resistance -- Junction-to-Ambient (3) -- Schottky Operating and Storage Temperature Range RqJA RqJA RqJA RqJA RqJA RqJA Tj, Tstg 201 105 62.5 197 97 62.5 - 55 to 150 C C/W
(1) Mounted with minimum recommended pad size, PC Board FR4. (2) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), Steady State. (3) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max.
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Motorola TMOS Product Preview Data
MMDFS3P303
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (4) (5)
Characteristics OFF CHARACTERISTICS Drain-Source Voltage Zero Gate Drain Current Gate Body Leakage Current ON CHARACTERISTICS (5) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) RDS(on) gFS Ciss (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Coss Crss td(on) Vdc, 2.0 Adc, (VDD = 20 Vd ID = 2 0 Ad VGS = 10 Vdc Vdc, RG = 6.0 ) ) tr td(off) tf td(on) Vdc, 2.0 Adc, (VDD = 20 Vd ID = 2 0 Ad VGS = 4.5 Vdc, 4 5 Vdc RG = 6.0 ) ) tr td(off) tf QT ( (VDS = 20 Vdc, ID = 3.5 Adc, Vd , 3 5 Ad , VGS = 10 Vdc) Q1 Q2 Q3 DRAIN SOURCE DIODE CHARACTERISTICS Forward On-Voltage (5) (IS = 1.7 Adc, VGS = 0 Vdc) Reverse Recovery Time ( (VGS = 0 V, IS = 3 5 A, V, 3.5 A, dIS/dt = 100 A/s) Reverse Recovery Stored Charge VSD trr ta tb QRR 1.0 -- -- -- -- 1.7 3.5 0.085 0.130 5.0 -- -- 0.100 0.160 -- Vdc mV/C (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 30 -- -- -- -- -- 27 -- -- -- -- -- 1.0 10 100 Vdc mV/C Adc nAdc Symbol Min Typ Max Unit
Static Drain-Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
W
mhos
-- -- --
405 200 55
-- -- --
pF
-- -- -- -- -- -- -- -- -- -- -- --
12.5 16 50 35 19 36 27 31 14 1.8 4.5 2.85
25 30 90 65 -- -- -- -- 25 -- -- --
ns
ns
nC
-- -- -- -- --
0.9 26.6 18.8 7.8 0.03
1.2 -- -- -- --
V ns
C
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Maximum Instantaneous Forward Voltage (5) IF = 100 mAdc Ad IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (5) VR = 30 V IR VF TJ = 25C 0.28 0.42 0.50 TJ = 25C 250 -- Maximum Voltage Rate of Change VR = 30 V dV/dt 10,000 TJ = 125C 0.13 0.33 0.45 TJ = 125C -- 25 mA V/ms Volts
mA
(4) Negative sign for P-channel device omitted for clarity (5) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (6) Switching characteristics are independent of operating junction temperature.
Motorola TMOS Product Preview Data
3
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
6.0 5.0 ID, DRAIN CURRENT (AMPS) 4.0 3.5 V 3.0 3.3 V 2.0 3.0 V 1.0 0 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 2.7 V 10 V 6.0 V 5.0 V 6.0 4.5 V 4.0 V TJ = 25C 5.0 3.7 V ID, DRAIN CURRENT (AMPS) 4.0 3.0 2.0 1.0 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25C VDS 10 V
100C TJ = - 55C
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 4.0 6.0 8.0 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C ID = 3.5 A
R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0.18 TJ = 25C 0.16 0.14 0.12 0.10 0.08 0.06 0.04 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ID, DRAIN CURRENT (AMPS) 10 V VGS = 4.5 V
Figure 3. On-Resistance versus Gate-To-Source Voltage
R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 4. On-Resistance versus Drain Current and Gate Voltage
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 VGS = 10 V ID = 1.5 A
1000 VGS = 0 V TJ = 125C
IDSS , LEAKAGE (nA)
100
10
100C
1.0 -25 0 25 50 75 100 125 150 0 5.0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-To-Source Leakage Current versus Voltage
4
Motorola TMOS Product Preview Data
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
QT 10 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 -10 Coss Crss - 5.0 VGS 0 VDS 5.0 10 15 20 25 30 Crss Ciss Ciss VDS = 0 VGS = 0 TJ = 25C 12 25
8.0 VGS Q1 Q2 10 ID = 3.5 A Q3 VDS 0 2.0 4.0 6.0 8.0 10 12 TJ = 25C 5.0 0 14 15
6.0 4.0 2.0 0
QG, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge
Figure 7. Capacitance Variation
1000 VGS = 10 V TJ = 25C ID = 2.0 A VDD = 15 V td(off) tf 10 tr td(on) 2.5 VGS = 0 V TJ = 25C
IS, SOURCE CURRENT (AMPS) 10
2.0
100 t, TIME (ns)
1.5
1.0
0.5 0
1.0 1.0 100 RG, GATE RESISTANCE (OHMS)
0
0.2
0.4
0.6
0.8
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100 EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VGS = 12 V SINGLE PULSE TA = 25C 10 ms 1.0 dc 1.0 ms
450 400 350 300 250 200 150 100 50 0 0.1 1.0 10 100 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) ID = 3.5 A
ID, DRAIN CURRENT (AMPS)
10
0.1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT
0.01
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
Motorola TMOS Product Preview Data
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MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5
0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1E-03 1E-02 1E-01 1E+00 t, TIME (s) CHIP JUNCTION
NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 2.32 W 0.0014 F 18.5 W 0.0073 F 50.9 W 0.022 F 37.1 W 0.105 F 56.8 W 0.484 F 24.4 W 3.68 F AMBIENT 1E+01 1E+02 1E+03
Figure 13. FET Thermal Response
di/dt IS trr ta tb TIME tp IS 0.25 IS
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 85C 25C 10
85C
TJ = 125C 1.0
- 40C
TJ = 125C 1.0
25C
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
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Motorola TMOS Product Preview Data
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IR, MAXIMUM REVERSE CURRENT (AMPS) 0.1 IR, REVERSE CURRENT (AMPS) TJ = 125C 0.01 85C 0.001 0.1 TJ = 125C 0.01
0.001
0.0001 25C
0.0001
25C
0.00001 0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
0.00001
0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current
Figure 18. Maximum Reverse Current
IO , AVERAGE FORWARD CURRENT (AMPS)
1000
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p dc FREQ = 20 kHz
C, CAPACITANCE (pF)
100
10 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 19. Typical Capacitance
Figure 20. Current Derating
PFO , AVERAGE POWER DISSIPATION (WATTS)
1.75 dc 1.50 1.25 1.00 0.75 Ipk/Io = 20 0.50 0.25 0 0 1.0 2.0 3.0 4.0 5.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p SQUARE WAVE
Figure 21. Forward Power Dissipation
Motorola TMOS Product Preview Data
7
MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
1.0 D = 0.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.1010 W CHIP JUNCTION 39.422 mF 1.2674 W 27.987 W 30.936 W 36.930 W 0.2292 F 2.267 F AMBIENT
493.26 mF 0.0131 F
Figure 22. Schottky Thermal Response
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Motorola TMOS Product Preview Data
MMDFS3P303
TYPICAL APPLICATIONS
STEP DOWN SWITCHING REGULATORS
LO + +
Vin -
CO
Vout -
LOAD
Buck Regulator
LO + +
Vin -
CO
Vout -
LOAD
Synchronous Buck Regulator
STEP UP SWITCHING REGULATORS
L1 + +
Vin Q1 -
CO
Vout -
LOAD
Boost Regulator
+
+
Vin -
CO
Vout -
LOAD
Buck-Boost Regulator
Motorola TMOS Product Preview Data
9
MMDFS3P303
TYPICAL APPLICATIONS MULTIPLE BATTERY CHARGERS
Buck Regulator/Charger
Q1 + Vin - D1 CO LO Q2 D2 BATT #1
Q3
D3 BATT #2
Li-lon BATTERY PACK APPLICATIONS
Battery Pack
PACK +
Li-Ion BATTERY CELLS
SMART IC
DISCHARGE
CHARGE
Q1
Q2 PACK -
SCHOTTKY
SCHOTTKY
* * * *
Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on.
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Motorola TMOS Product Preview Data
MMDFS3P303
SO-8 FOOTPRINT
0.060 1.52
0.275 7.0
0.155 4.0
0.024 0.6
0.050 1.270
inches mm
PACKAGE DIMENSIONS
A
8
D
5
C
E
1 4
H
0.25
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
h B C e A
SEATING PLANE
X 45 _
q
L 0.10 A1 B 0.25
M
q
CB
S
A
S STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE
CASE 751-06 SO- 08 ISSUE T
Motorola TMOS Product Preview Data
11
MMDFS3P303
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
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