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MCR12LD, MCR12LM, MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. * Blocking Voltage to 800 Volts * On-State Current Rating of 12 Amperes RMS at 80C * High Surge Current Capability -- 100 Amperes * Rugged, Economical TO-220AB Package * Glass Passivated Junctions for Reliability and Uniformity * Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design * High Immunity to dv/dt -- 100 V/sec Minimum at 125C * Device Marking: Logo, Device Type, e.g., MCR12LD, Date Code
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SCRs 12 AMPERES RMS 400 thru 800 VOLTS
G A K
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12LD MCR12LM MCR12LN On-State RMS Current (180 Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Forward Average Gate Power (t = 8.3 ms, TC = 80C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 12 100 A A Value Unit Volts
4
1
2
3
TO-220AB CASE 221A STYLE 3
I2t PGM PG(AV) IGM TJ Tstg
41 5.0 0.5 2.0 - 40 to 125 - 40 to 150
A2sec 1 Watts Watt A 2 3 4
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMATION
C C Device MCR12LD MCR12LM MCR12LN Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 1999
1
February, 2000 - Rev. 0
Publication Order Number: MCR12L/D
MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.2 62.5 260 Unit C/W C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) TJ = 25C TJ = 125C IDRM, IRRM -- -- -- -- 0.01 2.0 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage* (ITM = 24 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latch Current (VD = 12 V, Ig = 20 mA) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VTM IGT IH IL VGT -- 2.0 4.0 6.0 0.5 -- 4.0 10 12 0.65 2.2 8.0 20 30 0.8 Volts mA mA mA Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Critical Rate of Rise of On-State Current IPK = 50 A; Pw = 40 sec; diG/dt = 1 A/sec, Igt = 50 mA *Indicates Pulse Test: Pulse Width dv/dt di/dt 100 -- 250 -- -- 50 V/s A/s
v1.0 ms, Duty Cycle v2%.
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MCR12LD, MCR12LM, MCR12LN
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
10 VGT , GATE TRIGGER VOLTAGE (VOLTS) 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 9 GATE TRIGGER CURRENT (mA) 8 7 6 5 4 3 2 1 0 -40 -25 -10
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125
Figure 1. Typical Gate Trigger Current versus Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus Junction Temperature
100
100
10
IL , LATCHING CURRENT (mA) 5.0 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125
I H, HOLDING CURRENT (mA)
10
1.0 -40 -25 -10
1.0 -40 -25 -10
5.0
20
35
50
65
80
95
110 125
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical Holding Current versus Junction Temperature
Figure 4. Typical Latching Current versus Junction Temperature
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MCR12LD, MCR12LM, MCR12LN
P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 120 TC, CASE TEMPERATURE ( C) 115 110 105 100 dc 95 = 30 90 0 1 2 3 60 90 180 11 12 4 6 8 5 7 9 10 IT(RMS), RMS ON-STATE CURRENT (AMP) = CONDUCTION ANGLE 20 18 16 14 12 10 8 6 4 2 0 0 1 TJ = 125C 2 3 4 5 6 7 8 9 10 11 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 12 = CONDUCTION ANGLE = 30 90 180
dc
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
100 70 50 30 20 I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
10 7.0 5.0 3.0 2.0
125C 25C
1.0 0.7 0.5 0.3 0.2
0.1 0.5 1.0 1.5 2.0 2.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.0
Figure 7. Typical On-State Characteristics
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MCR12LD, MCR12LM, MCR12LN
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE Z
-T- C T
4
SEATING PLANE
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 3: PIN 1. 2. 3. 4.
CATHODE ANODE GATE ANODE
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5
MCR12LD, MCR12LM, MCR12LN
Notes
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MCR12LD, MCR12LM, MCR12LN
Notes
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MCR12LD, MCR12LM, MCR12LN
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MCR12L/D

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